Silicon Storage Technology, Inc.

Latt Tee

Nhan Do

Jinho Kim

Catherine Decobert

Yuri Tkachev

Serguei Jourba

Parviz Ghazavi

Bruno Villard

Gilles Festes

Bernard Bertello

Jean Francois Thiery

Fan Luo

Cynthia Fung

A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RCfor the memory cells and a first number Nof the memory cells having the lowest read current RC. A second read operation is performed to determine a second number Nof the memory cells having a read current not exceeding a target read current RC. The target read current RCis equal to the lowest read current RCplus a predetermined current value. The die is determined to be acceptable if the second number Nis determined to exceed the first number Nplus a predetermined number. The die is determined to be defective if the second number Nis determined not to exceed the first number Nplus the predetermined number.

Method of determining defective die containing non-volatile memory cells

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San Francisco, CA, United States of America

Latt Tee