Nokia Corporation

Lassi Pentti Olavi Hyvönen

Jussi Olavi Rahola

Arto Hujanen

Pei Li

Joonas Veli-Allan Krogerus

Matti Kalevi Somersalo

An apparatus including a first port configured to receive signals from a transceiver and to receive a first antenna; a second port configured to receive signals from a transceiver and to receive a second antenna; a first reactive component coupled to the first port; a second reactive component coupled to the first reactive component at a first junction and to the second port, wherein at least the first reactive component is configured to have an impedance that shifts the phase of a first signal, in a second operational resonant frequency band, received from the first antenna, and the second reactive component is configured to have an impedance that shifts the phase of a second signal, in the second operational resonant frequency band, received from the transceiver, so that the first signal and the second signal at least partially destructively interfere with one another at the first junction.

Apparatus, methods, computer programs and computer readable storage mediums for wireless communications

An antenna arrangement operable at a first resonant frequency f having a corresponding resonant wavelength &#x3bb; the antenna arrangement comprising: an antenna comprising a feed; a ground plane coupled to the antenna comprising a first region and a second region; and a grounded conductive structure coupled to the first region of the ground plane, wherein the second region of the ground plane is configured such that, at the first resonant frequency f the current flows predominantly in the grounded conductive structure compared to the second region of the ground plane.

Antenna arrangement

An integrated circuit, such as a radio frequency integrated circuit (RFIC), has a first layer bearing first metallization patterned for defining a first inductive coil, a second layer bearing second metallization patterned for defining a second inductive coil that overlies the first inductive coil and that is magnetically coupled to the first inductive coil through a third layer interposed between the first layer and the second layer. The third layer bears third metallization for defining an electric shield or electrostatic shield. The third metallization is patterned into a plurality of structures having shapes intended to minimize eddy currents. The electric shield is connected to further metallization that carries a ground potential. The third layer may further bear other metallization for coupling together at least two components of the integrated circuit. The integrated circuit may be fabricated by a CMOS process, and the first and second coils may be a primary coil and a secondary coil, respectively, of a radio frequency transformer. An additional electric shield may also be included, and in this case one electric shield can be coupled to a ground potential associated with the primary coil, and the second electric shield can be coupled to a ground potential associated with the secondary coil.

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Helsinki, Finland

Lassi Pentti Olavi Hyvönen