Ihp Gmbh-Innovations for High Performance Microelectronics/leibniz-Institut Fur Innovative Mikroelektronik

Technische Unversität Berlin

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Sicoya Gmbh

Ihp Gmbh - Innovations for High Performance Microelectronics

Ihp Gmbh Leibniz-Institut Für Innovative Mikroelektronik

Lars Zimmermann

Stefan Meister

Aws Al-Saadi

Dieter Knoll

Hanjo Rhee

Bernd Tillack

Gerhard Kahmen

Tolga Tekin

Benjamin Wohlfeil

Christoph Theiss

Christian Mai

Yuji Yamamoto

Hans Joachim Eichler

Karsten Voigt

Sebastian Kupijai

Stefan Lischke

Giannino Dziallas

Andreas Trusch

Ha Duong Ngo

Bulent Franke

David Stolarek

Jochen Kreißl

Bülent Franke

An electronic-photonic integrated precision delay-control component comprises a coarse-delay switching unit that is configured to assume one of a plurality of selectable switching states and to feed, in a given one of the switching states, an optical input signal forward to at least one of a plurality of selectable optical coarse-delay paths. A controllable fine-delay unit is configured to subject the optical input signal to a selectable fine group-delay amount that is tuneable between zero and a maximum fine group-delay amount. The coarse-delay switching unit and the fine-delay unit are arranged in a series connection to control application of a respective total group-delay amount to the optical input signal on any selectable total delay path, the total group-delay amount corresponding to a sum of the respective coarse group-delay amount and of the selectable fine group-delay amount. Co-integration of electronic components allows a complete pulse train generation on one chip with low sensitivity to perturbation, low drift and low manufacturing costs. A desired delay of individual pulses of the optical input signal can be tuned on chip with particularly high precision at particularly high pulse repetition frequencies.

Photonic precision delay component for high dynamic delay range

A sensor device including a deflectable membrane made of a 2D nanomaterial, a first optical waveguide for guiding light, disposed adjacent to the membrane and extending along the surface of the membrane at least in a first section, as well as a measuring device for measuring, within the first section the influence of the membrane on an evanescent wave range of the light guided along the first optical waveguide. The influence of the membrane on the light guided in the optical waveguide, in particular on the evanescent wave range of the light, can be measured interferometrically by detecting phasing differences or phase shifts. This allows for a force-free readout of the membrane deflection. By using very thin 2D nanomaterials, the membrane can also react to very quick changes in force.

Sensor device

An integrated optical coupler device comprising, on a substrate surface: an integrated optical coupling grating extending in lateral directions parallel to the substrate surface and which, by diffraction at its grating structures, either converts electromagnetic waves, guided parallel to the substrate surface, of at least two waveguide modes of integrated optical waveguides into fiber modes propagating perpendicularly to the substrate surface, or converts electromagnetic waves, propagating perpendicularly to the substrate surface, of a fiber mode into electromagnetic waves, propagating parallel to the substrate surface, of at least two waveguide modes, and a first conductor pair, connected to the coupling grating and formed by a first and a second integrated optical waveguide, through which, in mutually opposite first and second directions parallel to the substrate surface, electromagnetic waves of at least two waveguide modes can be conducted to the coupling grating or can be conducted away from the coupling grating.

Device for coupling a plurality of different fibre modes

An injection modulator for modulation of optical radiation, having an optical waveguide and a diode structure, having at least two p-doped semiconductor portions, at least two n-doped semiconductor portions and at least one lightly or undoped intermediate portion between the p-doped and n-doped portions. The p-doped portions when viewed in the longitudinal direction of the waveguide are offset with respect to the n-doped portions and the diode structure is arranged in a resonance-free portion of the waveguide. The p-doped portions lie on one side of the waveguide, the n-doped portions lie on the other side of the waveguide and the intermediate portion lies in the center, each portion extends transversely with respect to the waveguide longitudinal direction in the direction of the waveguide center of the waveguide and no p-doped portion when viewed in the longitudinal direction of the waveguide overlaps any n-doped portion.

Injection modulator

A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Germainium pin photodiode for integration into a CMOS or BICMOS technology

An electro-optic modulator for the modulation of optical radiation of a predetermined wavelength, the electro-optic modulator having at least one optical resonator in which a standing optical wave can be formed for the predetermined wavelength. In the resonator, at least two doped semiconductor sections&#x2014;as seen in the longitudinal direction of the resonator &#x2014;are arranged at a distance from one another, and the at least two doped semiconductor sections respectively lie locally at an intensity minimum of the standing optical wave.

Electro-optic modulator

Growing community of inventors

Berlin, Germany

Lars Zimmermann