Carl Zeiss Smt Gmbh

Lars Wischmeier

Markus Hauf

Martin Endres

Stig Bieling

Johannes Eisenmenger

Fabian Haacker

Markus Deguenther

Michael Patra

Hubert Holderer

Udo Dinger

Thomas Fischer

Stephan Kellner

Igor Gurevich

A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

Measurement illumination optical unit for guiding illumination light into an object field of a projection exposure system for EUV lithography

A method for illuminating an object field of a projection exposure apparatus includes providing a subset of first facets to be positioned in park positions, which are each spaced apart from an associated target position, but at most by a maximum distance.

Method for illuminating an object field of a projection exposure system

A mirror array includes a multiplicity of displaceable individual mirrors which are subdivided into at least two groups. The individual mirrors of the first group are displaceable in a very precise manner, and the individual mirrors of the second group are displaceable in a very quick manner.

Mirror array

An EUV lithography systemcomprises an EUV beam path and a monitor beam path The EUV beam path comprises a mirror system, which has a base and a multiplicity of mirror elementshaving concave mirror surfaces, the orientation of which relative to the base is respectively adjustable. The monitor beam pathcomprises at least one monitor radiation source, a screen, the mirror system, which is arranged in the monitor beam pathbetween the monitor radiation sourceand the screen, and a spatially resolving detector In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.

EUV lithography system

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Aalen, Germany

Lars Wischmeier