Qunano Ab

Sol Voltaics Ab

Hexagem Ab

Alignedbio Ab

Lars Samuelson

Jonas Ohlsson

Bjorn Jonas Ohlsson

Martin Magnusson

Knut Deppert

Patrik Svensson

Lars-Erik Wernersson

Truls Lowgren

Erik Lind

Werner Seifert

Damir Asoli

Zhaoxia Bi

Claes Thelander

Thomas M I Martensson

Bo Pedersen

Greg Alcott

Olivier Postel

Tomas Bryllert

Ingvar Åberg

Thomas Mårtensson

Lars-Ake Ledebo

Federico Capasso

Truls Löwgren

Björn Jonas Ohlsson

Lars Magnus Borgström

Bart Markus

Magnus Heurlin

Kristian Storm

Rafal Ciechonski

Anders Mikkelsen

Yourii Martynov

Peter Jesper Hanberg

Steven L Konsek

Lars-Åke Ledebo

Mikeal Bjork

Carl Martin Hall Magnusson

Thomas Johannes Krinke

Anil Dey

Bernhard Mandl

Ingvar Åberg

Mikael BJÖRK

Jonas Ohlson

Bo Pederson

Jonas Tegenfeldt

A method for fabrication of an InGaN semiconductor template, comprising growing an InGaN pyramid having inclined facets on a semiconductor substrate; processing the pyramid by removing semiconductor material to form a truncated pyramid having a first upper surface; growing InGaN, over the first upper surface, to form an InGaN template layer having a c-plane crystal facet forming a top surface. The InGaN semiconductor template is suitable for further fabrication of semiconductor devices, such as microLEDs configured to emit red, green or blue light.

Semiconductor template and fabrication method

A semiconductor device having a planar III-N semiconductor layer includes a substrate including a wafer and a buffer layer of a buffer material different from a material of the wafer, the buffer layer having a growth surface, an array of nanostructures epitaxially grown from the growth surface, a continuous planar layer formed by coalescence of upper parts of the nanostructures at an elevated temperature T, where the number of lattice cells spanning a center distance between adjacent nanostructures are different at the growth surface and at the coalesced planar layer, and a growth layer epitaxially grown on the planar layer.

Semiconductor device having a planar III-N semiconductor layer and fabrication method

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Concentric flow reactor

A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer () and a buffer layer (), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (); an array of nano structures () epitaxially grown from the growth surface; a continuous planar layer () formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (), epitaxially grown on the planar layer ().

A method of making a semiconductor device, comprising: forming a plurality of semiconductor seeds of a first III-nitride material through a mask provided over a substrate; growing a second III-nitride semiconductor material; planarizing the grown second semiconductor material to form a plurality of discrete base elements having a substantially planar upper surface. Preferably the step of planarizing involves performing atomic distribution of III type atoms of the grown second semiconductor material under heating to form the planar upper surface, and without supply of III type atoms is carried out during the step of planarization.

III-nitride semiconductor devices

The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.

Nanostructured LED array with collimating reflectors

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Concentric flower reactor

The solar cell structure according to the present invention comprises a nanowire () that constitutes the light absorbing part of the solar cell structure and a passivating shell () that encloses at least a portion of the nanowire (). In a first aspect of the invention, the passivating shell () of comprises a light guiding shell (), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

Nanowire-based solar cell structure

A radial nanowire Esaki diode device includes a semiconductor core of a first conductivity type and a semiconductor shell of a second conductivity type different from the first conductivity type. The device may be a TFET or a solar cell.

Radial nanowire Esaki diode devices and methods

The present invention provides a method and a system for forming wires () that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires () are grown from catalytic seed particles () suspended in a gas within a reactor. Due to a modular approach wires () of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Gas-phase synthesis of epitaxial semiconductor wires from seed crystals

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Method for manufacturing a nanowire structure

A light emitting diode (LED) includes a plurality of Group III-nitride nanowires extending from a substrate, at least one Group III-nitride pyramidal shell layer located on each of the plurality of Group III-nitride nanowires, a continuous Group III-nitride pyramidal layer located over the at least one Group III-nitride pyramidal shell layer, and a continuous pyramidal contact layer located over the continuous Group III-nitride pyramidal layer. The at least one Group III-nitride pyramidal shell layer is located in an active region of the LED. The plurality of Group III-nitride nanowires are doped one of n- or p-type. The continuous Group III-nitride pyramidal layer is doped another one of p- or n-type to form a junction with the plurality of Group III-nitride nanowires. A distance from a side portion of the continuous contact layer to the plurality of Group III-nitride nanowires is shorter than a distance of an apex of the continuous contact layer to the plurality of Group III-nitride nanowires.

Light emitting diode device having III-nitride nanowires, a shell layer and a continuous layer

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Recessed contact to semiconductor nanowires

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

Nanostructures and methods for manufacturing the same

Growing community of inventors

Malmo, Sweden

Lars Samuelson