Infineon Technologies Austria Ag

Globalfoundries Inc.

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Globalfoundries U.S. Inc.

Technische Universitát Dresden

Technische Universitaet Dresden

Heliatek Gmbh

Lars Mueller-Meskamp

Hermann Gruber

Thomas Christian Neidhart

Berthold Astegher

Franz Selzer

Jan Ludwig Bormann

Nelli Weiss

Nikolai Gaponik

Alexander Eychmueller

Jan Hoentschel

Karl Leo

Alban Zaka

Martin Gerhardt

Martin Pfeiffer

Tom Herrmann

Ulrike Bewersdorff-Sarlette

Christian Uhrich

Stefan Duenkel

Luca Pirro

Moritz Riede

Sylvio Schubert

Venkata Naga Ranjith Kuma Nelluri

Jan Meiss

Christoph Sachse

David Kneppe

Damien Angot

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuitry that operates in a first voltage domain, a second region including second circuitry that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Transferring information across a high voltage gap using capacitive coupling with DTI integrated in silicon technology

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Transferring information across a high voltage gap using capacitive coupling with dti integrated in silicon technology

One illustrative device disclosed herein includes a gate structure positioned above an active semiconductor layer of an SOI substrate and a counter-doped back-gate region positioned in the doped base semiconductor substrate of the SOI substrate. In this particular embodiment, the device also includes a counter-doped back-gate contact region positioned in the base semiconductor substrate, wherein the counter-doped back-gate region and the counter-doped back-gate contact region are doped with a dopant type that is opposite the dopant type in the base semiconductor substrate. In this illustrative example, the counter-doped back-gate region and the counter-doped back-gate contact region are laterally separated from one another by a portion of the doped base semiconductor substrate. The device also includes a conductive back-gate contact structure that is conductively coupled to the counter-doped back-gate contact region.

Transistor device with a plurality of active gates that can be individually modulated to change performance characteristics of the transistor

An optoelectronic component on a substrate includes a first and a second electrode. The first electrode is arranged on the substrate and the second electrode forms a counter electrode. At least one photoactive layer system is arranged between these electrodes. The at least one photoactive layer system including at least one donor-acceptor system having organic materials.

Transparent electrode for optoelectronic components

Transfering informations across a high voltage gap using capacitive coupling with DTI integrated in silicon technology

In sophisticated semiconductor devices, the lateral electric field in fully depleted transistor elements operated at elevated supply voltages may be significantly reduced by establishing a laterally graded dopant profile at edge regions of the respective channel regions. In some illustrative embodiments to this end, one or more dopant species may be incorporated prior to completing the gate electrode structure.

Transistor element with reduced lateral electrical field

In semiconductor devices, high-k dielectric materials may be formed on the basis of engineered surface conditions, thereby contributing to superior uniformity of the resulting characteristics. In some illustrative embodiments, the dielectric material may be stabilized in a ferroelectric phase, wherein the previous surface modulation, which, in the illustrative embodiments may include the introduction of respective species, such as dopant species, thereby contributing to uniform ferroelectric characteristics. In some illustrative embodiments, the process strategy may be applied to a buried insulating layer of an SOI substrate.

Engineering of ferroelectric materials in semiconductor devices by surface potential modulation

What is presented here is a transparent electrode having: at least one carrier layer for stabilizing the electrode; at least one electrically conductive layer containing metal nanowires, which is produced by spreading a suspension of a liquid and the metal nanowires surrounded by a stabilizing layer, along the carrier layer and drying same by removing the liquid; and at least one functional organic layer formed along the carrier layer, which, while the electrically conductive layer dries, by an electrical interaction with the metal nanowires and/or with the stabilizing layers of the metal nanowires, changes an interaction between the metal nanowires and the stabilizing layers such that the result is a substance-to-substance bond between the metal nanowires.

Transparent nanowire electrode comprising a functional organic layer

The invention relates to a method for producing an electrode layer of an electrical device, wherein the method includes the following steps: providing a quantity of nanoparticles from an electrically conductive material, the surfaces of each of which have a layer of a hygroscopic stabilizer material, preparing a substrate and producing an electrode layer on a substrate surface, wherein the nanoparticles in this context are deposited on the substrate surface and are tempered in a solvent atmosphere of a polar solvent.

Method for producing an electrode layer of an electrical device

Growing community of inventors

Dresden, Germany

Lars Mueller-Meskamp