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Btg International Limited

Lars Montelius

Andrej Litwin

Thomas J Adamo

Torbjorn G I Ling

An imaging system/camera consisting of multiple nano-sized optical elements arranged in an array format with more than one pixel per optical element will have a higher resolution than each element would be capable of individually, since each element being at a different point gathers slightly different overlapping information. Hence by processing such information one can obtain a clear image. Furthermore multiple information from sectors of an array of sensors can be processed to obtain 3-D, stereotypic and panoramic imaging and may be connected to each other allowing seeing around obstacles as well as enabling full 3-D tracking and/or metric determination of an unknown object. Color/spectroscopic imaging can be achieved by utilizing equally sized lenses and multi-wavelength sensing layers below the lenses. However, color/spectroscopic imaging and/or spectroscopy can be achieved by taking advantage of unique optical properties of nano-scaled lenses accepting various wavelengths below their diffraction limits.

Apparatus for imaging using an array of lenses

An array of nanometric dimensions consisting of two or more arms, positioned side by side, wherein the arms are of such nanometric dimensions that the beams can be moved or deformed towards or away from one another by means of a low voltage applied between the beams, whereby to produce a desired optical, electronic or mechanical effect. At nanometer scale dimensions structures previously treated as rigid become flexible, and this flexibility can be engineered since it is a direct consequence of material and dimensions. Since the electrostatic force between the two arms is inversely proportional to the square of the distance, a very considerable force will be developed with a low voltage of the order of 1-5 volts, which is sufficient to deflect the elements towards or away from one another. As preferred, the bulk of the element may comprise an insulating material, and an upper conductive layer is applied on the upper surface, where the element is formed by a nanolithography method such as nanoimprint lithography (NIL). Alternatively the elements may be formed completely of conductive material, where the elements are formed by a CMOS metalization process.

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Bjärred, Sweden

Lars Montelius