Globalfoundries Inc.

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Technische Universitát Dresden

Heliatek Gmbh

Lars Müller-Meskamp

Edward J Nowak

Karl Leo

Won Mok Kim

Jonghee Lee

Stefan Dünkel

Christian Uhrich

Luca Pirro

Moritz Riede

Martin Pfeiffer-Jacob

Johannes Müller

Jan Ludwig Bormann

Nikolai Gaponik

Franz Selzer

Sylvio Schubert

Christoph Sachse

Simone Hofmann

Alexander Eychmüller

Yong Hyun Kim

Jan Meiß

Nelli Weiß

The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.

Rounded shaped transistors for memory devices

The present disclosure generally relates to semiconductor structures and, more particularly, to devices with channel extension regions and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; and a channel below the gate structure, the channel comprising: a first channel region, adjacent to the source region; and a second channel region, adjacent to the drain region and comprising a lower threshold voltage than the first channel region.

Devices with channel extension regions

Growing community of inventors

Dresden, Germany

Lars Müller-Meskamp