Azur Space Solar Power Gmbh

Lars Ebel

Wolfgang Guter

Matthias Meusel

Frank Dimroth

Rene Kellenbenz

René Kellenbenz

A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.

Multi-junction solar cell

Solar cell stack comprising III-V semiconductor layers, which includes a first subcell having a first band gap and a first lattice constant and which includes a second subcell having a second band gap and a second lattice constant, and which includes an intermediate layer sequence disposed between the two solar cells. The intermediate layer sequence including a first barrier layer and a first tunnel diode and a second barrier layer, and the layers being arranged in the specified order. The tunnel diode includes a degenerate n+ layer having a third lattice constant and a degenerate p+ layer having a fourth lattice constant, the fourth lattice constant being smaller than the third lattice constant, and the first band gap being smaller than the second band gap, and the p+ layer having a different material composition than the n+ layer.

Solar cell stack

A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 &#x212b; greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.

Growing community of inventors

Eisingen, Germany

Lars Ebel