Intel Corporation

Tahoe Research, Ltd.

Lars D Skoglund

Rajendra C Dias

Edward Rudolph Prack

Danish Faruqui

Omkar G Karhade

Nitin A Deshpande

Yoshihiro Tomita

Edvin Cetegen

Sergei L Voronov

Rajen C Dias

Mihir A Oka

Tony Dambrauskas

David K Wilkinson, Jr

Manish Dubey

Amram Eitan

Tyler N Osborn

Timothy A Gosselin

Emre Armagan

Anil R Indluru

Underfill material flow control for reduced die-to-die spacing in semiconductor packages and the resulting semiconductor packages are described. In an example, a semiconductor apparatus includes first and second semiconductor dies, each having a surface with an integrated circuit thereon coupled to contact pads of an uppermost metallization layer of a common semiconductor package substrate by a plurality of conductive contacts, the first and second semiconductor dies separated by a spacing. A barrier structure is disposed between the first semiconductor die and the common semiconductor package substrate and at least partially underneath the first semiconductor die. An underfill material layer is in contact with the second semiconductor die and with the barrier structure, but not in contact with the first semiconductor die.

Underfill material flow control for reduced die-to-die spacing in semiconductor packages

Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or 'inactive' side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

Laser die backside film removal for integrated circuit (IC) packaging

Introducing an underfill material over contact pads on a surface of an integrated circuit substrate; and ablating the introduced underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation. A method including first ablating an underfill material to expose an area of contact pads on a substrate using temporally coherent electromagnetic radiation; introducing a solder to the exposed area of the contact pads; and second ablating the underfill material using temporally coherent electromagnetic radiation. A method including introducing an underfill material over contact pads on a surface of an integrated circuit substrate; defining an opening in the underfill material to expose an area of the contact pads using temporally coherent electromagnetic radiation; introducing a solder material to the exposed area of the contact pads; and after introducing the solder, removing the sacrificial material.

Ablation method and recipe for wafer level underfill material patterning and removal

A microelectronic die may be formed with chamfer corners for reducing stresses which can lead to delamination and/or cracking failures when such a microelectronic die is incorporated into a microelectronic package. In one embodiment, a microelectronic die may include at least one substantially planar chamfering side extending between at least two adjacent sides of a microelectronic die. In another embodiment, a microelectronic die may include at least one substantially curved or arcuate chamfering side extending between at least two adjacent sides of a microelectronic die.

Microelectronic die having chamfered corners

Growing community of inventors

Chandler, AZ, United States of America

Lars D Skoglund