Imec Vzw

Imec

Tokyo Electron Limited

Taiwan Semiconductor Manufacturing Comp. Ltd.

Lars-Ake Ragnarsson

Tom Schram

Mihaela Ioana Popovici

Ian Colgan

Ioan Domsa

David Hurley

Barry Clarke

Gerhardus Van Der Linde

Patrick Hughes

Maciej Burel

Paul A Zimmerman

Naoto Horiguchi

Stefan De Gendt

Hendrik F W Dekkers

Yasutoshi Okuno

Robert Daniel Clark

Gerrit J Leusink

Shih-Hsun Chang

Wim Deweerd

Mustafa Badaroglu

Julien Ryckaert

David Paul Brunco

Wilfried B Vandervorst

Matty Caymax

Alessio Spessot

Christian Caillat

Annelies Delabie

Eugenio Dentoni Litta

Naohisa Sengoku

Joshua Tseng

Stefan Kubicek

Dina Triyoso

Soon Aik Chew

Thomas Y Hoffman

Yusuke Oniki

Romain Ritzenthaler

Kazuhiko Yamamoto

Hendrik Fw Dekkers

Pierre Fazan

Hendrik FW Dekkers

Paul Zimmerman

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

Semiconductor processing systems with in-situ electrical bias

A method of fabricating a semiconductor device includes placing a semiconductor wafer into a processing chamber, the semiconductor wafer including a first conductive layer and a second conductive layer separated by an intermediate layer; applying an electrical bias voltage across the intermediate layer by coupling the first conductive layer to a first potential and coupling the second conductive layer to a second potential; and annealing the semiconductor wafer while applying the electrical bias voltage.

Semiconductor processing system with in-situ electrical bias and methods thereof

The disclosed technology generally relates to semiconductor devices and methods of forming the same. In one aspect, a method of forming a semiconductor device having a first field-effect transistor (FET) device and a second FET device comprises forming the first and second FET devices from a first stack and a second stack comprising a channel material arranged on a sacrificial material. The method can include forming first spacers at sidewalls of the first and second stacks, and forming a second spacer between the first spacers. After recessing of the sacrificial material and removal of the first spacers, gate structures may be formed, wrapping around the at least partly released channel portions. The gate structure of the first transistor device can be separated from the gate structure of the second transistor device by the second spacer.

Semiconductor devices and methods of forming the same

The disclosed technology generally relates to semiconductor devices and more particularly to a gate structure for a semiconductor device, and to methods of forming the same. In an aspect a method for forming a gate structure includes forming a first set of one or more semiconductor features and a second set of one or more semiconductor features. The method additionally includes forming a sacrificial gate extending across the semiconductor features of the first set and the semiconductor features of the second set. The method additionally includes forming a hole by etching the sacrificial gate, wherein the sacrificial gate is divided into a first sacrificial gate section and a second sacrificial gate section, forming a barrier in the hole by depositing a barrier material in the hole, removing the first sacrificial gate section and the second sacrificial gate section by etching wherein a first trench section is formed and a second trench section is formed, forming a first gate conductor in the first trench section and the second trench section, forming a mask above the second trench section, the mask exposing the first trench section, etching the first gate conductor in the first trench section, wherein the mask and the barrier counteracts etching of the first gate conductor in the second trench section, and forming a second gate conductor in the first trench section.

Method of forming gate of semiconductor device and semiconductor device having same

A method for manufacturing a dual work function semiconductor device includes forming a first silicon oxide layer on a substrate and forming a first hafnium-containing dielectric material layer on the first silicon oxide layer. The method further includes forming an aluminum-containing dielectric material layer on the first hafnium-containing dielectric material layer and performing a thermal treatment to intermix the silicon oxide layer, the first hafnium-containing dielectric material layer and the aluminum-containing dielectric material layers. This results in an intermixing dielectric layer containing hafnium, aluminum, silicon, and oxygen. The method further includes forming a first metal-containing conductive layer on the intermixing dielectric layer and patterning the first metal-containing conductive layer and the intermixing dielectric layer, thereby forming a first gate stack in a first region.

Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereof

The disclosed technology generally relates to integrated circuit devices and methods of forming the same, and more particularly to metal electrodes whose effective work function can be tuned. In one aspect, a method of forming a metal electrode of a semiconductor structure includes providing a semiconductor substrate having at least a region covered with a dielectric. The semiconductor substrate is introduced into a chamber configured for atomic layer deposition (ALD). A metal for the metal electrode is deposited at least on the dielectric by performing an ALD cycle. Performing the ALD cycle includes pulsing a Ti-containing precursor gas followed by pulsing a Ta-containing precursor gas, and further includes pulsing NHgas.

Method for tuning the effective work function of a metal

The disclosed technology generally relates a semiconductor device comprising transistors, and more particularly to a semiconductor device comprising transistors each having a gate stack with a different effective work function, and methods of fabricating such a device. In one aspect, the method of fabricating the semiconductor comprises providing at least two channel regions in the substrate and providing a dielectric layer on the substrate. The method additionally includes forming a plurality of gate regions by providing openings in the dielectric layer. The method further includes providing a gate dielectric layer in the openings and providing on the gate dielectric layer of each of the gate regions a barrier layer stack having different thickness along the different gate regions.

Method for manufacturing a semiconductor device comprising transistors each having a different effective work function

A method of manufacturing a dual work function semiconductor device is disclosed. In one aspect, the method includes providing a substrate having first and second areas for forming first and second transistor types. The method additionally includes forming a dielectric layer on the substrate, which extends to cover at least parts of the first and second areas. The method additionally includes forming a first metal layer/stack on the dielectric layer in the first area, where the first metal layer/stack comprises a first work function-shifting element. The method additionally includes forming a second metal layer/stack on the first metal layer in the first area and on the dielectric layer in the second area, where the second metal layer/stack comprises a second work function-shifting element. The method additionally includes annealing to diffuse the first work function-shifting element and the second work function-shifting element into the dielectric layer, and subsequently removing the first metal layer/stack and the second metal layer/stack. The method further includes forming a third metal layer/stack in the first and second predetermined areas.

Method for manufacturing a dual work function semiconductor device

One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.

Method for fabricating a high-K dielectric layer

A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.

MOSFET devices and methods for making them

The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.

Atomic layer deposition method for depositing a layer

Growing community of inventors

Leuven, Belgium

Lars-Ake Ragnarsson