Momentive Performance Materials Gmbh

Draka Comteq B.v.

Slt Technologies, Inc.

General Electric Company

Soraa, Inc.

Larry Qiang Zeng

Mark Philip D'Evelyn

Dong-Sil Park

Kristi Jean Narang

Huicong Hong

Xian-An Cao

Anil Raj Duggal

Frederic F Ahlgren

Dennis Robert Simons

Rob Hubertus Matheus Deckers

Cedric Gonnet

Ivo Flammer

Victor Lienkong Lou

Guangjun Xu

Robert Arthur Giddings

Bruce J Badding

Jon Leist

Subhrajit Dey

Sanjay Gangal

Cédric Gonnet

Mark Philip D'evelyn

Kirsh Afimiwala

Thomas Loehl

Ronald Diorka

Bruce John Badding

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distribution

A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm, with an absorbance per unit thickness of greater than about 0.01 cm. In one embodiment, the composition may have an amount of oxygen present in a concentration of less than about 3&#xd7;10per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Crystalline gallium nitride containing flourine

An apparatus for processing materials at high temperatures comprises a high strength enclosure; a plurality of high strength radial segments disposed adjacent to and radially inward from the high strength enclosure; a liner disposed adjacent to and radially inward from the radical segments; a chamber defined interior to the liner; a heating device disposed within the chamber; and a capsule disposed within the chamber, the capsule configured to hold a supercritical fluid. The apparatus may be used for growing crystals, e.g., GaN, under high temperature and pressure conditions.

Apparatus for processing materials at high temperatures and pressures

Method of making a gallium nitride crystalline composition having a low dislocation density

Disclosed is a method of heat treating quartz glass deposition tubes at between 900&#xb0; C. and 1200&#xb0; C. for at least 115 hours. The resulting deposition tubes are useful in forming optical preforms that can yield optical fibers having reduced added loss.

Glass-tube extended-baking process

Extended-baking process for glass deposition tubes

A heater that may include an outer housing and an inner tube is provided. The inner tube is in a coaxial relation to and within the outer housing. An inward facing surface of the inner tube defines a volume sufficient to receive a reaction capsule, and the outward facing surface is radially spaced from an inward facing surface of the outer housing sufficient to define a gap. A filler material is disposed within the gap. The filler material responds to pressure such that the filler volume is reduced by less than 5 volume percent at greater than 500 MPa pressure and at greater than 500&#xb0; C. temperature. One or more heating elements are disposed in the gap. The heating elements are in thermal communication with the inner tube.

Heater, apparatus, and associated method

A silica deposition tube is fused in a deuterium (D) gas atmosphere and optionally baked in a deuterium (D) gas atmosphere to substantially reduce the hydrogen content in the tube for decreased fiber attenuation. Alternatively, raw silica material is pre-treated in Dgas followed by fusing of the raw silica tube in a Dgas environment.

Method for forming fused quartz using deuterium

A silica deposition tube is fused in a deuterium (D ) gas atmosphere and optionally baked in a deuterium (D ) gas atmosphere to substantially reduce the hydrogen content in the tube for decreased fiber attenuation. Alternatively, raw silica material is pre-treated in D gas followed by fusing of the raw silica tube in a D gas environment.

Optical fiber deposition tube fused in deuterium atmosphere for attenuation improvement

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Strongsville, OH, United States of America

Larry Qiang Zeng