E.i. Dupont De Nemours and Company

Larry L Berger

Frank L Schadt, Iii

Jerald Feldman

Fredrick Claus Zumsteg, Jr

Viacheslav Alexandrovich Petrov

Andrew Edward Feiring

Lynda Kaye Johnson

Michael Karl Crawford

A photoresist element comprising a substrate; an etch resistant layer; and at least one photoresist layer prepared from a photoresist composition comprising a polymer selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: &#x2014;C(R)(R')OH, wherein Rand R&#x2032; are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF)n wherein n is 2 to 10; (d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole) or CXCYwhere X&#x2550;F or CFand Y&#x2550;&#x2014;H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CXCY; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component.

Multilayer elements containing photoresist compositions and their use in microlithography

The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure &#x2014;C(R)(R')OR wherein Rand R&#x2032; are the same or different fluoroalkyl groups of from one or taken together are (CF)wherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 &#x3bc;m at a wavelength of 157 nm.

Dissolution inhibitors in photoresist compositions for microlithography

A photoresist composition having (A) at least two polymers selected from the group consisting of: (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic; (b) a branched polymer containing protected acid groups, said polymer comprising one or more branch segment(s) chemically linked along a linear backbone segment; (c) fluoropolymers having at least one fluoroalcohol group having the structure: &#x2014;C(Rf)(Rf')OH wherein Rf and Rf&#x2032; are the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF2)n wherein n is 2 to 10;(d) amorphous vinyl homopolymers of perfluoro(2,2-dimethyl-1,3-dioxole or CX2&#x2550;CY2 where X=F or CF3 and Y=H or amorphous vinyl copolymers of perfluoro(2,2-dimethyl-1,3-dioxole) and CX2&#x2550;CY2; and (e) nitrile/fluoroalcohol-containing polymers prepared from substituted or unsubstituted vinyl ethers; and (B) at least one photoactive component.

Polymers blends and their use in photoresist compositions for microlithography

A fluorine-containing polymer prepared from at least a spacer group selected from the group consisting of ethylene, alpha-olefins, 1,1'-disubstituted olefins, vinyl alcohols, vinyl ethers, and 1,3-dienes; and a norbornyl radical containing a functional group containing the structure: &#x2014;C(R)(R)Orwherein Rand Rare the same or different fluoroalkyl groups of from 1 to about 10 carbon atoms or taken together are (CF)wherein n is an integer ranging from 2 to about 10 and Ris a hydrogen atom or an acid- or base-labile protecting group; r is an integer ranging from 0-4. The fluorine-containing polymer has an absorption coefficient of less than 4.0 mm&#x2212;at a wavelength of 157 nm. These polymers are useful in photoresist compositions for microlithography. They exhibit high transparency at this short wavelength and also possess other key properties, including good plasma etch resistance and adhesive properties.

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Chadds Ford, PA, United States of America

Larry L Berger