Applied Materials, Inc.

Larry Frazier

John C Forster

Cheng-Hsiung Matt Tsai

Michael Sterling Jackson

Cheng-Hsiung Matthew Tsai

Quancheng Gu

Mei Po Yeung

Xiaoxi Guo

Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.

Substrate support for plasma etch operations

A method for in-situ cleaning of a dielectric dome surface having been used in pre-clean processes is provided. Carbon containing deposits are removed by providing a plasma of one or more oxidizing gases which react with the carbon containing films to form volatile carbon containing compounds.

Oxygen plasma clean to remove carbon species deposited on a glass dome surface

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Brentwood, CA, United States of America

Larry Frazier