Medtronic, Inc.

Stmicroelectronics Gmbh

Stmicroelectronics S.a.

Warsaw Orthopedic, Inc.

Medtronic Minimed, Inc.

Medtronics, Inc.

Larry Earl Tyler

Paul F Gerrish

Anna J Malin

David A Ruben

Andreas A Fenner

Kevin K Walsh

Scott Dennis Vernon

Bruce C Fleischhauer

James Thomas May

David C McClure

James D Reinke

John Louis Sommer

Kenneth C Gardeski

Gordon Orvis Munns

Brad Conrad Tischendorf

Thomas P Miltich

Mark A Lysinger

Andrew Jason Thom

William John Taylor

Mohsen Askarinya

Joyce Yamamoto

Wesley A Santa

Joseph M D'Sa

Jeffrey O York

Rajiv Shah

Kevin Thomas Foley

Timothy J Denison

Randal C Schulhauser

Gabriela C Molnar

Bradley Chi Liang

Nicholas M Benson

Mark R Boone

Richard L Brown

Michael F Mattes

Mark E Henschel

Charles R Gordon

Kevin T Foley

Francois Jacquet

Brian T Kannard

François Jacquet

Newton Metcalf

Tyler S Stevenson

Kenneth W Cooper

Heather Diane Orser

Kris R Holtzclaw

Geoffrey DeWitt Batchelder

Tyler Mueller

Michael William Barror

Robert W Hocken, Jr

Jalpa S Shah

Jin-Yong Wu

Robert Hocken

Jin Yong Wu

Calvert S Bontemps

Brandon P Scott

Newton H Metcalf

Mark A Boone

Various embodiments of a nuclear radiation particle power converter and method of forming such power converter are disclosed. In one or more embodiments, the power converter can include first and second electrodes, a three-dimensional current collector disposed between the first and second electrodes and electrically coupled to the first electrode, and a charge carrier separator disposed on at least a portion of a surface of the three-dimensional current collector. The power converter can also include a hole conductor layer disposed on at least a portion of the charge carrier separator and electrically coupled to the second electrode, and nuclear radiation-emitting material disposed such that at least one nuclear radiation particle emitted by the nuclear radiation-emitting material is incident upon the charge carrier separator.

Nuclear radiation particle power converter

A spinal implant includes an implant body including a first endplate and a second endplate. A plurality of electrodes include at least one electrode disposed with the first endplate and at least one electrode disposed with the second endplate such that the electrodes conduct an electric current to stimulate tissue growth adjacent the implant body. Systems, surgical instruments and methods are disclosed.

Spinal implant system and method

Random access memory having a plurality of memory cells, each of the plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature and a bias circuit operatively coupled to at least one of the plurality of memory cells, the bias circuit being configured to generate a bias voltage for the at least one of the plurality of memory cells. The bias circuit has a second electrical characteristic being variable based, at least in part, on temperature. The first electrical characteristic is approximately proportional to the second electrical characteristic over a predetermined range of temperatures, the predetermined range of temperatures being greater than zero. The bias voltage on each of the plurality of memory cells is approximately proportional with variations in the first electrical characteristic over the predetermined range of temperatures.

Stable memory source bias over temperature and method

Devices and methods compensate for perturbations in a stimulation signal caused by external conditions such as a magnetic field of an MRI machine so that stimulation therapy may continue in the presence of the external condition. Compensation for the perturbations during a stimulation pulse of a stimulation phase may be provided by using feedback within a stimulation current source. Perturbations during a recharge phase may be addressed by utilizing an active recharge at least when the external condition is present. Furthermore, compensation for perturbations during a recharge pulse of the active recharge phase may be provided by using feedback within a recharge current source. Passive recharge may be used instead of active recharge when the external condition is not present to preserve battery life of the stimulation device. The stimulation device may include a sensor to detect the external condition so that an appropriate mode of recharge may be chosen.

Devices and methods to provide stimulation therapy in the presence of external conditions that induce undesirable perturbations

This disclosure describes techniques for generating stimulation current pulses that have differing pulse shapes in a medical device. A circuit architecture is described that is configured to charge a capacitor to an initial amount of charge, modulate the amount of charge stored in the capacitor based on a control signal, and generate a stimulation current pulse that has an amplitude based on the amount charge stored in the capacitor. The circuit architecture may be configured to generate complex pulse shapes, such as, e.g., steps, ramps, bursts, and combinations thereof.

Stimulation waveform generator for an implantable medical device

Techniques and circuits are described for approximation of the differential capacitance of a capacitive sensor to, among other things, optimize device operation and power consumption. In particular, feedback techniques are utilized for measurement and approximation of the differential capacitance of the capacitive sensor. In accordance with the disclosure, the capacitance approximation value for a test cycle preceding a given test cycle is utilized to reduce the number of iterations to be performed in a continuous series of test cycles. The capacitance approximation value for the given test cycle is reported as being equivalent to that of the preceding test cycle if the variance between the selected capacitance and the unselected capacitance is less than or equal to a first predefined value.

Servo techniques for approximation of differential capacitance of a sensor

A system includes a capacitance adjustment module and a control module. The capacitance adjustment module is configured to connect one or more of N capacitors in parallel with one of a first and second capacitance. The control module identifies the smaller of the first and second capacitances and identifies the larger of the first and second capacitances. Subsequently, the control module, during each of M iterations, instructs the capacitance adjustment module to connect at least one of the N capacitors across a set of nodes in parallel with the smaller identified capacitance, and determines whether the capacitance associated with the set of nodes is greater than the larger identified capacitance. After the M iterations, the control module approximates the difference between the first and second capacitances based on which of the N capacitors are connected across the nodes. M and N are integers greater than or equal to 1.

Techniques for approximating a difference between two capacitances

A reconstituted wafer level package for a versatile high-voltage capable component is disclosed. The reconstituted wafer package includes a dice substantially encapsulated by a mold material except for a first face. A dielectric layer is disposed on the first face of the dice. The package further includes an array of ball bumps formed on an exterior facing portion of the dielectric layer. Further, a field plate is disposed within the dielectric material and interposed between the first face of the dice and the ball bump array. The field plate may be spaced from the dice by a predetermined distance to prevent dielectric breakdown of the material of the dielectric layer.

Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability

An SRAM having two capacitors connected in series between respective bit storage nodes of each memory cell. The two inverters of the memory cell are powered by a positive voltage and a low voltage. The two capacitors are connected to each other at a common node. A leakage current generator is coupled to the common node. The leakage current generator supplies to the common node a leakage current to maintain a voltage which is approximately halfway between the voltages of the high and low SRAM supplies.

Robust SRAM memory cell capacitor plate voltage generator

Hermetically sealed assemblies, for example, that include IC chips, are configured for incorporation within a connector terminal of an implantable medical electrical lead, preferably within a contact member of the terminal. An assembly may include two feedthrough subassemblies, welded to either end of the contact member, to form an hermetic capsule, in which an IC chip is enclosed, and a tubular member, which allows a lumen to extend therethrough, along a length of the terminal. A multi-electrode lead may include multiplexer circuitry, preferably a switch matrix element and a communications, control and power supply element that are electrically coupled to the contact member and to another contact member of the terminal. Each pair of switch matrix switches allows for any two of the electrodes to be selected, in order to deliver a stimulation vector, via stimulation pulses from a device/pulse generator, to which the connector terminal is connected.

Multi-electrode implantable systems and assemblies therefor

Multi-electrode implantable systems and assemblies thereof

Delivering electrical stimulation to a body tissue by a circuit. The circuit includes a first and second terminal electrically coupled to body tissue. A sole capacitor has a first electrode and a second electrode. The first electrode is coupled to the first terminal. The second electrode is coupled to a power source through a switch.

Apparatus for tissue stimulation

Growing community of inventors

Mesa, AZ, United States of America

Larry Earl Tyler