Agere Systems Inc.

Agere Systems Guardian Corp.

Lucent Technologies Inc.

Larry E Plew

Erik Cho Houge

Catherine B Vartuli

John Martin McIntosh

Jeffrey Bruce Bindell

Michael J Antonell

Fred Anthony Stevie

Frederick A Stevie

Terri Lynn Shofner

Nitin Patel

Charles E Bryson, Iii

Michael A Ackeret

Ryan Keith Maynard

Dennis Earl Schrope

Jennifer Juszczak

Richard J Dare

Xiao-Zhong Wu

Jeffry B Bindell

A probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.

Probe having a microstylet

A manufacturing method using a modular substrate-based processing scheme for producing semiconductor devices, provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.

Semiconductor manufacturing using modular substrates

A system and method of metrology ( ) whereby a three dimensional shape profile is defined ( ) for a surface feature on a substrate by applying ( ) a transform function F(x) to an image intensity map I(x,y) obtained ( ) by inspecting the substrate with a scanning electron microscope ( ). The transform function F(x) is developed ( ) by correlating the image intensity map of a first wafer ( ) to a height vector ( ) obtained by inspecting the first wafer with a more accurate metrology tool, for example a stylus nanoprofilometer ( ). A simple ratio-based transform may be used to develop F(x). An asymmetric multiple parameter characterization of the three dimensional shape profile may be developed ( ) by plotting critical space and width dimensions (S , S , W , W ) from a vertical axis (C&mdash;C) as a function of height of the feature.

Three dimensional reconstruction metrology

A method and apparatus for minimizing the surface contamination of semiconductor wafers ( ) during the semiconductor device manufacturing process. Semiconductor wafers ( ) are stored in a storage cassette ( ) with their face sides ( ) facing downward and their back sides ( ) facing upward. Particulate contamination present on the back sides of the wafers is thereby secured to the wafers by the force of gravity, and the faces of the wafers are shielded from falling debris. An automated wafer handling device ( ) is provided with a rotary joint ( ) to accomplish the wafer flipping motion before inserting a wafer into a cassette and after removing the wafer from the cassette.

Method and apparatus for minimizing semiconductor wafer contamination

In-line process control for 120 nm and 100 nm lithography using the installed scanning electron microscope (SEM) equipment base. A virtual three-dimensional representation of a photoresist feature is developed by applying a transform function to SEM intensity data representing the feature. The transform function correlates highly accurate height vector data, such as provided by a stylus nanoprofilometer or scatterometer, with the highly precise intensity data from the SEM. A multiple parameter characterization of at least one critical dimension of the virtual feature is compared to an acceptance pattern template, with the results being used to control a downstream etch process or an upstream lithography process. A multiple parameter characteristic of a three dimensional representation of the resulting post-etch final feature may be compared to device performance data to further refine the acceptance pattern template.

Process control using three dimensional reconstruction metrology

A reflective lens with at least one curved surface formed of polycrystalline material. In one embodiment, a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one embodiment, a system includes a source for generating the x-rays, a polycrystalline surface region having crystal spacing suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position and positioning a sample between the surface region and the reference position so that the x-rays are transmitted through the sample.

X-ray system

The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

Method of determining a crystallographic quality of a material located on a substrate

A modular substrate-based processing scheme for producing semiconductor devices provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or they may be individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.

Modular semiconductor substrates

A probe tip locator for, and method of, use in determining a location of a probe tip relative to the probe tip locator comprising sets of discrete location markers in which numbers and positions of the location markers in each of the sets are employable uniquely to identify corresponding specific locations on the probe tip locator, the sets being distributed about the probe tip locator to avoid unbalanced partial encroachments into both sides of a scanpath of the probe tip by location markers in sets normally adjacent the scanpath thereby to prevent an erroneous determination of location caused by unbalanced partial encroachments of the location markers into both sides of the scanpath as the probe tip traverses the scanpath.

Probe tip locator having improved marker arrangement for reduced bit encoding error

A scanning probe microscope includes a sensor head adjacent a stage for holding a sample, a scanning actuator for positioning the sensor head relative to the sample, and a probe carried by the sensor head. The probe preferably includes a base connected to the sensor head, a shank extending from the base at an angle offset from perpendicular to the base, and a tip connected to a distal end of the shank for contacting the sample. The angle is preferably in a range of 5 to 20&deg;. The tip is preferably laterally offset from the base to permit viewing of the tip without interference from the shank and the base. Thus, the location of the probe tip relative to the sample may be more easily determined.

Probe for scanning probe microscopy and related methods

The present invention provides an apparatus and a method of manufacturing that apparatus. More specifically, to a method of manufacturing probes for a stylus nanoprofilometer having a non-circular probe tip geometry and a method of measurement of semiconductor wafer features using the same. In one embodiment, the probe comprises an upper portion couplable to the stylus nanoprofilometer and a probative portion coupled to the upper portion. The probative portion has a cross section that is substantially thinner than a cross section of the upper portion. The probative portion further has a terminus distal the upper portion and a reentrant angle from the terminus to the upper portion.

Method of mapping a surface using a probe for stylus nanoprofilometry having a non-circular cross-section

Apparatus for holding and aligning a sample to be examined by a scanning electron microscope or the like includes an alignment device having base structure installable in the scanning electron microscope in a predetermined orientation. The alignment device also includes a holder for the sample which is mounted to the base structure for rotative movement about a rotation axis relative to the base structure. An adjuster is mounted on the base structure and can be manipulated to rotate the sample holder about the rotation axis. This alignment device is installed in a base holder and a video camera captures an image of the sample held by the sample holder. The image is displayed on a video monitor and the adjuster is then manipulated to rotatively align the sample to a desired orientation. The alignment device, including the sample, may then be removed from the base holder and installed in the scanning electron microscope with the sample being properly aligned.

Apparatus for holding and aligning a scanning electron microscope sample

Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.

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St. Cloud, FL, United States of America

Larry E Plew