Invisage Technologies, Inc.

Samsung Electronics Co., Ltd.

University of Toronto

Sargent, Edward

Larissa Levina

Edward Hartley Sargent

Gerasimos Konstantatos

Jason Paul Clifford

Ian Howard

Ethan J D Klem

Ghada Koleilat

Shiguo Zhang

Paul Cyr

Steven Ashworth McDonald

Eun Joo Jang

Hyo Sook Jang

Jihyun Min

Ankit Jain

Sjoerd Hoogland

Oleksandr Voznyy

Makhsud I Saidaminov

Edward H Sargent

Steve McDonald

Petar Todorovic

Ethan Jd Klem

Jason Invisage TechInc Clifford

Gerasimos Invisage Tech:Inc Konstantatos

A semiconductor nanocrystal particle including a transition metal chalcogenide represented by Chemical Formula 1, the semiconductor nanocrystal particle having a size of less than or equal to about 100 nanometers, and a method of producing the same:MMCha&#x2003;&#x2003;Chemical Formula 1

Semiconductor nanocrystal particles and production methods thereof

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Quantum dot optical devices with enhanced gain and sensitivity and methods of making same

A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons.

Photodetectors and photovoltaics based on semiconductor nanocrystals

The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics

Materials for electronic and optoelectronic devices having enhanced charge transfer

Provided herein are embodiments of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, include only protrusions or peninsulas, and have no islands. The method of producing the three-dimensional bicontinuous heterostructure includes forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer that is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure, and forming a coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.

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Toronto, Canada

Larissa Levina