Avanex Corporation

L&eacute;on Goldstein

Denis Leclerc

Jean-Yves Emery

Christophe Ougier

A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.

Semiconductor optical component and a method of fabricating it

The invention concerns a semiconductor optical amplifier including at least two amplifier sections ( ) respectively favoring a higher gain of the TE mode and the TM mode of polarization of the light to be amplified, said sections each having an active guide structure ( ) of the same thickness (e), the amplifier being characterized in that the active guide structure ( ) of the two sections ( ) is subjected to respective different tension stresses and/or has a different geometry so as to render the overall gain of the amplifier insensitive to the polarization of said light to be amplified, and in that there is no discontinuity of the effective refractive index at the transition between the sections ( ).

Growing community of inventors

Chaville, France

Léon Goldstein

Growing community of inventors

Chaville, France

L&eacute;on Goldstein

Léon Goldstein