Texas Instruments Corporation

Qorvo Us, Inc.

Cavendish Kinetics Limited

Lance W Barron

William Craig McDonald

Richard Lee Knipe

Robertus Petrus Van Kampen

James Norman Hall

Divyanshu Agrawal

Arun Gupta

Terry Alan Bartlett

James D Huffman

Adam Joseph Fruehling

John Charles Ehmke

Patrick Ian Oden

Mickael Renault

James Carl Baker

Cuiling Gong

Sandra S Zheng

Ivan Kmecko

Shibajyoti Ghosh Dastider

Mark F Reed

Marie Denison

Brian Goodlin

Arthur Monroe Turner

Wei-Yan Shih

Roberto Gaddi

Jason Michael Neidrich

Virgil Cotoco Ararao

Jacques Marcel Muyango

Toby R Linder

Willibrordus G M Van Den Hoek

James Douglas Huffman

A method of manufacturing a MEMS device. The MEMS device has a cavity in which a beam will move to change the capacitance of the device. After most of the device build-up has occurred, sacrificial material is removed to free the beam within the MEMS device cavity. Thereafter, exposed ruthenium contacts are exposed to fluorine to either: dope exposed ruthenium and reduce surface adhesive forces, form fluorinated Self-Assembled Monolayers on the exposed ruthenium surfaces, deposit a nanometer passivating film on exposed ruthenium, or alter surface roughness of the ruthenium. Due to the fluorine treatment, low resistance, durable contacts are present, and the contacts are less susceptible to stiction events.

Anti-stiction enhancement of ruthenium contact

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Stable landing above RF conductor in MEMS device

A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Flexible MEMS device having hinged sections

The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

MEMS RF-switch with near-zero impact landing

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Method of forming a flexible MEMS device

The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.

Naturally closed MEMs switch for ESD protection

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

MEMS electrostatic actuator device for RF varactor applications

A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD type pixel, by forming a substrate having a non-planar upper surface, and depositing a photoresist spacer layer upon the substrate. The spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the spacer layer. A control member is formed upon the planarized spacer layer, and an image member is formed over the control member. The image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM). The spacer layer is planarized by masking a selected portion of the spacer layer with a grey-scale lithographic mask to remove binge in the selected portion.

Operation/margin enhancement feature for surface-MEMS structure; sculpting raised address electrode

In described examples, a DMD includes an array of micromirror pixels. Each pixel includes a right electrode on a first side of the pixel, a left electrode on a second side of the pixel adjacent the first side, and a cantilevered beam supporting a mirror. The cantilever beam tilts on two axes of translation: pitch and roll. The mirror has: a first landed position (on a first and second spring tip) over the right electrode; and a second landed position (on the first and a third spring tip) over the left electrode, such that the first landed position and the second landed positions are 90&#xb0; apart. In transitioning from the first landed position to the second landed position, the mirror maintains contact with the first spring tip while rolling from the second spring tip to the third spring tip.

Micromirror apparatus and methods

A method of forming a micro-electromechanical systems (MEMS) pixel, such as a DMD-type pixel, by depositing a photoresist spacer layer upon a substrate. The photoresist spacer layer is exposed to a grey-scale lithographic mask to shape an upper surface of the photoresist spacer layer. A control member is formed upon the shaped spacer layer, and has a sloped portion configured to maximize energy density. An image member is configured to be positioned as a function of the control member to form a spatial light modulator (SLM).

Sloped electrode element for a torsional spatial light modulator

A DMD having an array of micromirror pixels wherein each pixel comprises a right electrode on a first side of the pixel, a left electrode on a second side of the pixel adjacent the first side and a cantilevered beam supporting a mirror. The cantilever beam tilts on two axes of translation: pitch and roll. The mirror has a first landed position (on a first and second spring tip) over the right electrode and a second landed position (on the first and a third spring tip) over the left electrode such that the first landed position and the second landed positions are 90&#xb0; apart. In transitioning from the first landed position to the second landed position, the mirror maintains contact with the first spring tip while rolling from the second spring tip to the third spring tip.

A hermetic package comprising a substrate () having a surface with a MEMS structure () of a first height (), the substrate hermetically sealed to a cap () forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack () of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (); the stack having a bottom metal seed film () adhering to the substrate with a first width (), and further a top metal seed film () adhering to the cap with a second width () smaller than the first width, the top metal seed film tied to a layer () including gold-indium intermetallic compounds, layer () having a height greater than the first height.

Hermetically sealed MEMS device and its fabrication

A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.

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Wylie, TX, United States of America

Lance W Barron