Intel Corporation

Other

Tokyo Ohka Kogyo Co., Ltd.

Lana Jong

Brian S Doyle

Swaminathan Sivakumar

Nick Lindert

Nadia M Rahhal-Orabi

Satyarth Suri

Steven J Keating

Lin Sha

Nicholas Lawrence Abbott

Kazumasa Wakiya

Makarem A Hussein

Takayuki Haraguchi

Shigeru Yokoi

Shan Christopher Clark

A method of patterning a metal () on a vertical sidewall () of an excavated feature () includes placing a material () in the excavated feature such that a portion () of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor () suitable for an eDRAM device.

Embedded memory device having MIM capacitor formed in excavated structure

Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

A cleaning composition comprises at least quaternary ammonium hydroxide, a water-soluble organic solvent, water, an anticorrosive, and potassium hydroxide of 1 mass percent or less of a total amount of the solution. This cleaning composition can singly and effectively remove a photoresist film, a buried material, a metallic residue from the surface of a semiconductor substrate.

Cleaning composition and method of cleaning semiconductor substrate

The present invention provides a novel class of water-soluble cleavable surfactants and methods for utilizing these surfactants.

Cleavable, water-soluble surfactants

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Hillsboro, OR, United States of America

Lana Jong