International Business Machines Corporation

Applied Materials, Inc.

Lan Yu

Heng Wu

Ruilong Xie

Tyler Sherwood

Junli Wang

Kangguo Cheng

Alexander Reznicek

Dechao Guo

Ruqiang Bao

Chen Zhang

Benjamin David Briggs

Siddarth A Krishnan

Raghav Sreenivasan

Xin Miao

Jingyun Zhang

Reinaldo Ariel Vega

Michael Patrick Chudzik

Kevin W Brew

Huimei Zhou

Xing Chen

Gen Tsutsui

Adra Carr

Joseph F Salfelder

Amirhasan Nourbakhsh

Juntao Li

Veeraraghavan S Basker

Chanro Park

Shogo Mochizuki

Oleg Gluschenkov

Hemanth Jagannathan

Julien Frougier

Wenyu Xu

Srinivas Gandikota

Injo Ok

Andrew Mark Greene

Robert Jan Visser

Seshadri Ganguli

Xuefeng Liu

Chun Wing Yeung

Chun-Chen Yeh

Roger Allan Quon

Yixiong Yang

Mingwei Zhu

Zhebo Chen

Jay William Strane

Tao Li

Wei Wang

Miaomiao Wang

Jacqueline S Wrench

Youngseok Kim

El Mehdi Bazizi

Zihao Yang

Sung Dae Suk

Ashish Pal

Samuel Sung Shik Choi

Archana Kumar

Max Batres

Nicolas Louis Gabriel Breil

Ria Someshwar

Raman Gaire

Ki Cheol Ahn

Michel Khoury

Joshua S Holt

Michael Jason Fronckowiak

Exemplary methods of fabricating high quality quantum computing components are described. The methods include removing native oxide from a deposition surface of a silicon substrate in a cleaning chamber of a processing system, and transferring the silicon substrate under vacuum to a deposition chamber of the processing system. The methods further include depositing an aluminum layer on the deposition surface of the silicon substrate in the deposition chamber, where an interface between the aluminum layer and the deposition surface of the silicon substrate is oxygen free.

High quality quantum computer components

Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

Indium-gallium-nitride light emitting diodes with light reflecting mirrors

Embodiments of the present invention are directed to methods and resulting structures for nanosheet devices having defect free channels. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. The nanosheet stack includes alternating first sacrificial layers and second sacrificial layers. One layer of the first sacrificial layers has a greater thickness than the remaining first sacrificial layers. The first sacrificial layers are removed and semiconductor layers are formed on surfaces of the second sacrificial layers. The semiconductor layers include a first set and a second set of semiconductor layers. The second sacrificial layers are removed and an isolation dielectric is formed between the first set and the second set of semiconductor layers.

Stacked nanosheet transistor with defect free channel

Strained semiconductor FET devices with epitaxial quality improvement are provided. In one aspect, a semiconductor FET device includes: a substrate; at least one device stack including active layers oriented horizontally one on top of another on the substrate; gates surrounding at least a portion of each of the active layers; gate spacers alongside the gates; and source/drains, interconnected by the active layers, on opposite sides of the gates, wherein the source/drains are offset from the gates by inner spacers, wherein the source/drains include an epitaxial material having a low defect density which induces strain in the active layers, and wherein the gate spacers are formed from a same material as the inner spacers. A method of forming the semiconductor FET device using a spacer last process is also provided.

Strained semiconductor FET devices with epitaxial quality improvement

In one embodiment a semiconductor structure comprises a semiconductor substrate, a trench dielectric layer disposed in a trench of the semiconductor substrate, a first source/drain region disposed in contact with the semiconductor substrate, a gate and a second source/drain region. The gate is disposed between the first source/drain region and the second source/drain region. The semiconductor structure further comprises a dielectric isolation layer disposed between the semiconductor substrate and the second source/drain region.

Electrostatic discharge diode having dielectric isolation layer

Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.

Structure and method of bi-layer pixel isolation in advanced LCOS back-plane

A semiconductor structure includes a first electrode; a second electrode; a dielectric material between the first electrode and the second electrode, the dielectric material having at least one wall extending from the first electrode to the second electrode to define a void within the dielectric material and between the first electrode and the second electrode; and a layer of phase change material on the at least one wall of the dielectric material and in contact with the first electrode and the second electrode.

Electronic fuse with passive two-terminal phase change material and method of fabrication

Monolithically stacked VTFET devices having source/drain contacts with increased contact area and dielectric isolation are provided. In one aspect, a stacked VTFET device includes: at least a bottom VTFET below a top VTFET, wherein the bottom VTFET and the top VTFET each includes source/drain regions interconnected by a vertical fin channel, and a gate stack alongside the vertical fin channel; and source/drain contacts to the source/drain regions, wherein at least one of the source/drain contacts is in direct contact with more than one surface of a given one of the source/drain regions. A stacked VTFET device having at least a bottom VTFETbelow a top VTFET, and a bottom VTFETbelow a top VTFET, and a method of forming a stacked VTFET device are also provided.

Contact and isolation in monolithically stacked VTFET

An approach for creating a buried local interconnect around a DDB (double diffusion break) to reduce parasitic capacitance on a semiconductor device is disclosed. The approach utilizes a metal, as the local interconnect, buried in a cavity around the DDB region of a semiconductor substrate. The metal is disposed by two dielectric layers and the substrate. The two dielectric layers are recessed beneath two gate spacers. The buried local interconnect is recessed into the cavity where the top surface of the interconnect is situated below the top surface of the surrounding S/D (source/drain) epi (epitaxy). The metal of the local interconnect can be made from W, Ru or Co.

Recessed local interconnect formed over self-aligned double diffusion break

A semiconductor nanosheet device including semiconductor channel layers vertically aligned and stacked one on top of another, separated by a work function metal, and a second layer between two first layers, the second layer and two first layers between the semiconductor channel layers and a substrate. A semiconductor device including a lower first layer, a second layer, and a source drain region between a first set of semiconductor channel layers vertically aligned and stacked one on top of another, and a second set of semiconductor channel layers. A method including forming a stack sacrificial layer, a stack of nanosheet layers, forming a cavity by removing the stack sacrificial layer, and simultaneously forming a first layer on an upper surface of the stack sacrificial layer, on vertical side surfaces of the set of sacrificial gates, and an upper first layer and a lower first layer in a portion of the cavity.

Nanosheet transistor with enhanced bottom isolation

A vertical field effect transistor includes a top source/drain region in contact with a top portion of a channel fin extending perpendicularly from a semiconductor substrate, a bottom source/drain region is disposed above the semiconductor substrate and on opposite sidewalls of a bottom portion of the channel fin, a metal gate surrounding the channel fin is separated from the top source/drain region by a top spacer and from the bottom source/drain region by a bottom spacer, the metal gate and the top spacer are in contact with an adjacent first interlevel dielectric layer. A silicide layer is directly above an uppermost surface of the top source/drain region, and a nitride layer is directly above an uppermost surface of the silicide layer. A top source/drain contact, having a size that is substantially less than a length of the channel fin, extends until an uppermost surface of the nitride layer.

Contact formation for vertical field effect transistors

Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.

Method of CMP integration for improved optical uniformity in advanced LCOS back-plane

Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor; pre-cleaning the substrate; depositing a titanium silicide (TiSi) layer on the n transistor and on the p transistor by plasma-enhanced chemical vapor deposition (PECVD); optionally depositing a first barrier layer on the titanium silicide (TiSi) layer and selectively removing the first barrier layer from the p transistor; selectively forming a molybdenum silicide (MoSi) layer on the titanium silicide (TiSi) layer on the n transistor and the p transistor; forming a second barrier layer on the molybdenum silicide (MoSi) layer; and annealing the semiconductor structure. The method may be performed in a processing chamber without breaking vacuum.

Methods of forming semiconductor structures

Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device.

Contact resistance reduction in nanosheet device structure

Embodiments disclosed herein include a nanosheet transistor for reducing parasitic capacitance. The nanosheet transistor may include a spacer region between a high-k metal gate and an epitaxial layer. The spacer region may include a first nanosheet stack with a first nanosheet and a second nanosheet. The spacer region may include an inner spacer region between the first nanosheet and the second nanosheet, and a side subway region located along an edge of the first nanosheet, the inner spacer region, and the second nanosheet.

Full nanosheet airgap spacer

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Voorheesville, NY, United States of America

Lan Yu