Cabot Microelectronics Corporation

Other

Lamon Jones

Michael L White

Brian Reiss

Jeffrey Gilliland

John Clark

Kevin J Moeggenborg

Timothy P Johns

Alicia Walters

Richard Romine

Michael White

The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Composition and method for polishing bulk silicon

The invention relates to a chemical-mechanical polishing composition comprising silica, one or more tetraalkylammonium salts, one or more bicarbonate salts, one or more alkali metal hydroxides, one or more aminophosphonic acids, one or more rate accelerator compounds, one or more polysaccharides, and water. The polishing composition reduces surface roughness and PSD of polished substrates. The invention further relates to a method of chemically-mechanically polishing a substrate, especially a silicon substrate, using the polishing composition described herein.

Silicon polishing compositions with improved PSD performance

The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

The invention provides a polishing composition comprising silica, an aminophosphonic acid, a polysaccharide, a tetraalkylammonium salt, a bicarbonate salt, an azole ring, and water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition.

Composition and method for polishing polysilicon

The invention relates to a chemical-mechanical polishing composition comprising silica, one or more organic carboxylic acids or salts thereof, one or more polysaccharides, one or more bases, optionally one or more surfactants and/or polymers, optionally one or more reducing agents, optionally one or more biocides, and water, wherein the polishing composition has an alkaline pH. The polishing composition exhibits a high removal rate and low particle defects and low haze. The invention further relates to a method of chemically-mechanically polishing a substrate using the polishing composition described herein.

Silicon polishing compositions with high rate and low defectivity

The invention provides a method of chemically-mechanically polishing a substrate comprising at least one layer of single crystal silicon carbide. The method utilizes a chemical-mechanical polishing composition comprising a liquid carrier, an abrasive, a catalyst comprising a transition metal composition, and an oxidizing agent.

Polishing silicon carbide

The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition.

Stable, high rate silicon slurry

The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

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Aurora, IL, United States of America

Lamon Jones