Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Soitec

Novares France

Wormsensing

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Lamine Benaissa

Bruno Imbert

Paul Gondcharton

Jean-Sebastien Moulet

Marc Rabarot

Yann Lamy

Etienne Navarro

Jean-Sébastien Moulet

Thierry Salvetat

Ismail Degirmencioglu

Bruno Ghyselen

Hubert Moriceau

Emmanuel Augendre

François Templier

Francois Andrieu

Alexandre Reinhardt

Gweltaz Gaudin

Christophe Cazes

Thomas Signamarcheix

Laurent Brunet

Caroline Coutier

Chiara Sabbione

Marie Gorisse

Guillaume Rodriguez

Christelle Navone

François Bollier

Anne-Marie Charvet

Marilyne Roumaine

Jean-Sébestien Moulet

Frédérick Reichheld

Marilyne Roumanie

Jude Guelfucci

A functionalized object includes at least one mechanical wave sensor providing the object with a vibration and deformation detection capability. The mechanical wave sensor comprises: a sensitive cell having a thickness less than or equal to 50 microns, and comprising an active layer made of a monocrystalline or polycrystalline piezoelectric material and two electrodes, which are in contact with the active layer and accessible at a first surface of the sensitive cell, and a support layer secured to the second surface of the sensitive cell and secured to the object. The functionalized object comprises at least two electrically conductive strips disposed on the first surface of the sensitive cell and on a surface of the object, each strip connecting an electrode to an electrical contact pad. A method is used for producing such a functionalized object.

Functionalized object with integrated mechanical wave sensor and associated production method

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

Method for sealing cavities using membranes

A composite structure, intended for a planar co-integration of electronic components of different functions, the composite structure including from its base towards its surface: a support substrate made of a first material, the support substrate including cavities each opening into an upper face of the support substrate, the cavities being filled with at least one composite material consisting of a matrix of a crosslinked preceramic polymer, the matrix being charged with inorganic particles; and a thin film made of a second material, the thin film being bonded to the upper face of the support substrate and to the composite material.

Composite structure, intended for a planar co-integration of electronic components of different functions

A device and a method for locking and/or unlocking a motor vehicle opening panel and vehicle having the device. The device includes a detection wall having an inner side and an opposite outer side, the outer side forming a contact detection region, and a detection component arranged against the inner side for detecting contact between a user's finger or hand and the outer side. The detection component includes a sensor having a layer of a piezoelectric material which has surface undulations in the form of ridges. The layer of piezoelectric material is configured to detect predetermined contact on the outer side with a view to controlling the locking or unlocking of the opening panel.

Device for locking and/or unlocking a motor vehicle opening panel, vehicle comprising said device and method for locking or unlocking a motor vehicle opening panel using said device

A method for producing an adjustable bulk acoustic wave resonator comprising a transducer stack (E) and a tuning stack (E). According to the invention, transducer stack (E) includes two defined electrodes () and piezoelectric material (), and stack (E) includes a layer of piezoelectric material () and two defined electrodes (). The method includes: a) production of the transducer stack; b) formation of an electrically insulating layer on an electrode () of the transducer stack; c) formation of a defined electrode () of the tuning stack on the electrically insulting layer such that it is aligned with the electrodes of the transducer stack; d) assembly, on the electrode (), of a substrate of piezoelectric material; e) fracturing of the substrate of piezoelectric material; and f) formation of the other defined electrode () of the tuning stack, aligned with the defined electrode ().

Method for the production of a bulk acoustic wave resonator with a reduced parasitic capacitance

A touch surface device, comprising at least:

Touch surface device

A process for transferring a useful layer to a carrier substrate including a first surface is provided, the process including the steps of: providing a donor substrate including a first surface, a weakened zone including implanted species, the useful layer, which is bounded by the weakened zone and by the first surface of the donor substrate, and an amorphous zone disposed, in the useful layer, parallel to the weakened zone; assembling, on a side of the first surface of the donor substrate and on a side of the first surface of the carrier substrate, the donor substrate with the carrier substrate by bonding, such that the amorphous zone is at least partially facing at least one cavity that is partially bounded by the first surface of the donor substrate; and splitting the donor substrate along the weakened zone so as to reveal the useful layer.

Method for transferring a useful layer into a supporting substrate

A method for transferring, from a donor substrate to a carrier substrate, a thin layer having a first coefficient of thermal expansion. This method comprises: &#x2014;forming an embrittlement plane in the donor substrate; &#x2014;forming an electrically insulating layer on the surface of the donor substrate and/or of the carrier substrate; &#x2014;producing an assembly by placing the donor substrate and the carrier substrate in contact with one another via the insulating layer; &#x2014;separating the assembly by fracturing along the embrittlement plane. In order to form the electrically insulating layer, the method comprises coating the donor substrate and/or the carrier substrate with a coating formulation including a composite material formed by a matrix made of a particle-filled preceramic polymer, the composite material having a second coefficient of thermal expansion, the second coefficient of thermal expansion differing from the first coefficient of thermal expansion by no more than 20% of the first coefficient of thermal expansion.

Method for transferring a thin layer using a filled preceramic polymer

A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Optoelectronic device manufacturing method

A semiconductor on insulator type substrate, comprising at least: in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.

SOI substrate compatible with the RFSOI and FDSOI technologies

A transfer method includes steps of a) supplying a support layer having a first face, structures being assembled by their front face on the first face, and c) transferring the structures onto a host face of a host substrate. The support layer includes folding regions, between the structures, adapted to pass from a folded state to an unfolded state under the action of an external excitation. Between steps a) and c), a step b) is included of executing the external action in such a way as to make the folding regions pass from the folded state to the unfolded state such that the spacing between the structures varies.

Method for transferring structures

Fabrication of a circuit with superposed transistors includes assembly of a structure having transistors formed from a first semiconducting layer with a support provided with a second semiconducting layer in which transistors are provided on a higher level. The second semiconducting layer is coated with a thin layer of silicon oxide. The assembly of said structure and the support is made by direct bonding in which the thin silicon oxide layer is bonded to oxidised portions of getter material.

Assembly for 3D circuit with superposed transistor levels

The invention relates to a method for transferring structures on a host substrate, the method comprising the following steps in sequence: The temporary substrate comprises a matrix made of a stretchable material, and a plurality of inserts on which the structures are assembled, the inserts comprising a material with a Young's Modulus higher than that of the stretchable material.

A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.

Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes

A method includes steps a) providing the first structure successively including a first substrate, a first layer made from a metal base and a first metal-based metal oxide, b) providing the second structure successively including a second substrate, a second layer made from a second material and a second metal-based metal oxide, the first and second metal oxides presenting a standard free enthalpy of formation &#x394;G&#xb0;, the second material being chosen so that it has an oxide presenting a standard free enthalpy of formation strictly less than &#x394;G&#xb0;, c) bonding the first structure and second structure by direct adhesion, d) activating diffusion of the oxygen atoms of the first and second metal oxides to the second layer so as to form the oxide of the second material.

Growing community of inventors

Massy, France

Lamine Benaissa