Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Lamia Nouri

Nicolas Posseme

Stefan Landis

Frédéric Allibert

Sebastien Barnola

Frederic-Xavier Gaillard

Isabelle Bertrand

Frédéric-Xavier Gaillard

Thibaut David

Damien Massy

Sébastien Barnola

Aymen Ghorbel

Stéphan Landis

Fr D Ric-Xavier Gaillard

A method for forming reliefs on a face of a substrate is provided, successively including forming a protective screen for protecting at least a first zone of the face; an implanting to introduce at least one species comprising carbon into the substrate from the face of the substrate, the forming of the protective screen and the implanting being configured to form, in the substrate, at least one carbon modified layer having a concentration of implanted carbon greater than or equal to an etching threshold only from a second zone of the face of the substrate not protected by the protective screen; removing the protective screen; and etching the substrate from the first zone selectively with respect to the second zone.

Formation of reliefs on the surface of a substrate

A method for producing at least one pattern in a substrate is provided, including providing a substrate having a front face surmounted by at least one masking layer carrying at least one mask pattern, carrying out an ion implantation of the substrate so as to form at least one first zone having a resistivity &#x3c1;1 less than a resistivity &#x3c1;2 of at least one second non-modified zone, after the ion implantation step, immersing the substrate in an electrolyte, and removing the at least one first zone selectively at the at least one second zone, the removing including at least an application of an electrochemistry step to the substrate to cause a porosification of the at least one first zone selectively at the at least one second zone.

Method for producing patterns in a substrate

The invention relates in particular to a method for producing subsequent patterns in an underlying layer (), the method comprising at least one step of producing prior patterns in a carbon imprintable layer () on top of the underlying layer (), the production of the prior patterns involving nanoimprinting of the imprintable layer () and leave in place a continuous layer formed by the imprintable layer () and covering the underlying layer (), characterized in that it comprises the following step: at least one step of modifying the underlying layer () via ion implantation () in the underlying layer (), the implantation () being carried out through the imprintable layer () comprising the subsequent patterns, the parameters of the implantation () being chosen in such a way as to form, in the underlying layer (), implanted zones () and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

Method for obtaining patterns in a layer

The invention relates in particular to a method for creating patterns in a layer () to be etched, starting from a stack comprising at least the layer () to be etched and a masking, layer () on top of the layer () to be etched, the masking layer () having at least one pattern (), the method comprising at least:

Method for creating patterns

A method for producing patterns in a layer to be etched, from a stack including at least the layer to be etched and a masking layer overlying the layer to be etched, with the masking layer having at least one pattern. The method includes modifying a first area of the layer to be etched by ion implantation through the masking layer; depositing a buffer layer to cover the pattern of the masking layer; modifying another area of the layer to be etched, different from the first area, by ion implantation through the buffer layer, to a depth of the layer to be etched greater than the implantation depth of the preceding step of modifying; removing the buffer layer; removing the masking layer; removing the modified areas by etching them selectively to the non-modified areas of the layer to be etched.

Method for producing patterns

A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.

Method for producing patterns by ion implantation

The invention relates in particular to a method for producing subsequent patterns in an underlying layer (), the method comprising at least one step of producing prior patterns in a carbon imprintable layer () on top of the underlying layer (), the production of the prior patterns involving nanoimprinting of the imprintable layer () and leave in place a continuous layer formed by the imprintable layer () and covering the underlying layer (), characterized in that it comprises the following step:

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Grenoble, France

Lamia Nouri