Micron Technology Incorporated

Lodestar Licensing Group LLC

Lalla Fatima Drissi

Giuseppe D'Eliseo

Giuseppe Ferrari

Massimo Iaculo

Paolo Papa

Xinghui Duan

Eric Kwok Fung Yuen

Carla L Christensen

Chiara Cerafogli

Carminantonio Manganelli

Anna Scalesse

Maddalena Calzolari

Iolanda Del Villano

Xiangang Luo

Yoav Weinberg

Alberto Sassara

Luigi Esposito

Xiaolai Zhu

Salvatore Del Prete

Doriana Tardio

Massimo Laculo

Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

Adaptive block mapping

Methods, systems, and devices for techniques for enhanced read performance on blocks of memory cells are described. The method may involve selecting a first block of memory cells from a set of blocks of memory cells of a memory system based on a condition of the first block of memory cells being met and setting one or more programming parameters corresponding to the first block of memory cells such that the one or more programming parameters are within a threshold value of one or more programming parameters corresponding to a second block associated with a storage density different from a storage density of the first block of memory cells. Further, the method may involve performing an operation on the block of memory cells according to the one or more programming parameters.

Techniques for enhanced read performance on repurposed blocks of memory cells

Methods, systems, and devices for memory operations are described. A memory system may write data to sequential physical addresses of the memory system based on receiving multiple write commands, where the sequential physical addresses may be associated with sequential logical addresses. Based on writing the data, the memory system may receive a read command for data stored in the memory system, where the read command may include a logical address. The memory system may determine a physical address of the memory system where the data is stored based on the received logical address, a last logical address written at the memory system, and a sequence number group associated with the last logical address. Based on determining the physical address, the memory system may read the data stored at the physical address.

Direct logical-to-physical address mapping for sequential physical addresses

Methods, systems, and devices for host-enabled block swap techniques are described. In some examples, a host system may receive an indication of a health metric associated with a first physical block and a second physical block of a memory system, where a first logical block of the memory system is associated with a first type of data and is mapped to the first physical block, and where a second logical block of the memory system is associated with a second type of data. The host system may then determine that the health metric associated with the first physical block satisfies a threshold and may update a mapping associated with the first virtual block, the second virtual block, the first physical block, and the second physical block.

Host-enabled block swap techniques

Devices and techniques for corrupted storage portion recovery in a memory device are described herein. A failure event can be detected during a garbage collection operation on a collection of storage portions (e.g., pages) in a memory array. Here, members of the collection of storage portions are being moved from a former physical location to a new physical location by the garbage collection operation. A reference to a former physical location of a possibly corrupt storage portion in the collection of storage portions can be retrieved in response to the failure event. Here, the possibly corrupt storage portion has already been written to a new physical location as part of the garbage collection operation. The possibly corrupt storage portion can then be rewritten at the new physical location using data from the former physical location.

Corrupted storage portion recovery in a memory device

Devices and techniques for NAND logical-to-physical table region tracking are described herein. A write request, including a logical page and data to be written at the logical page, is received at a controller of a NAND device. The NAND controller may then establish an entry in a logical-to-physical (L2P) mapping table between the logical page and a physical page of a physical block of the NAND device to which the data is written. Here, the entry may be in a region of the L2P mapping table that is one of multiple regions. An indication of the region may be written in a data structure corresponding to the physical block.

NAND logical-to-physical table region tracking

A variety of applications can include apparatus and/or methods of operating the apparatus in which storage in the memory device is managed. An allocation can include conducting a garbage collection procedure to free up one or more blocks. In various embodiments, execution of a garbage collection procedure can be based on operation of two tables with respect to a logical to physical mapping table split into logical to physical mapping table regions saved in the memory device. The first table can maintain counts of valid pages in blocks for a logical to physical mapping table region. The second table can include bits to identify logical to physical mapping table regions involved in the garbage collection procedure based on the entries in the first table. Search of the second table can determine logical to physical mapping table regions involved in the garbage collection. Additional apparatus, systems, and methods are disclosed.

Scheme to improve efficiency of device garbage collection in memory devices

In one approach, a computer storage device has one or more pivot tables and corresponding bit maps stored in volatile memory. The storage device has non-volatile storage media that stores data for a host device. The pivot tables and bit maps are used to determine physical addresses of the non-volatile storage media for logical addresses received in commands from the host device that are determined to be within a sequential address range (e.g., LBAs that are part of a prior sequential write operation by the host device). When a command is received by the storage device that includes a logical address within the sequential address range, then one of the pivot tables and its corresponding bit map are used to determine the physical address of the non-volatile storage media that corresponds to the logical address.

Reading sequential data from memory using a pivot table

Scheme to improve efficiency of garbage collection in cached flash translation layer

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Ottaviano, Italy

Lalla Fatima Drissi