Applied Materials, Inc.

Lala Zhu

Dongqing Yang

Dmitry Lubomirsky

Peter Hillman

Nitin K Ingle

Soonam Park

Mehmet Tugrul Samir

Martin Yue Choy

Ming Xia

Tien Fak Tan

Christopher Snedigar

Fei C Wang

Shi Che

A semiconductor processing method may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The substrate may include an exposed region of silicon-and-oxygen-containing material. The substrate may include an exposed region of a liner material. The methods may include providing a hydrogen-containing precursor to the semiconductor processing region. The methods may include contacting the substrate with the fluorine-containing precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the exposed silicon-and-oxygen-containing material.

Methods of highly selective silicon oxide removal

Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

Multi-zone semiconductor substrate supports

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

Semiconductor processing chamber for multiple precursor flow

Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

Process window widening using coated parts in plasma etch processes

Methods of selectively removing silicon oxide are described. Exposed portions of silicon oxide and spacer material may both be present on a patterned substrate. The silicon oxide may be a native oxide formed on silicon by exposure to atmosphere. The exposed portion of spacer material may have been etched back using reactive ion etching (RIE). A portion of the exposed spacer material may have residual damage from the reactive ion etching. A self-assembled monolayer (SAM) is selectively deposited over the damaged portion of spacer material but not on the exposed silicon oxide or undamaged portions of spacer material. A subsequent gas-phase etch may then be used to selectively remove silicon oxide but not the damaged portion of the spacer material because the SAM has been found to not only preferentially adsorb on the damaged spacer but also to halt the etch rate.

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Fremont, CA, United States of America

Lala Zhu