Virginia Tech Intellectual Properties, Inc.

Lakshmi Ravi

Dong Dong

Rolando Burgos

Joshua Stewart

Jian Liu

Steven Schmalz

Gate control of power semiconductor devices using reduced gate drivers is disclosed. A circuit breaker may include a multitude of transistors, such as insulated gate bipolar transistors (IGBTs), connected in series with one another. Each transistor may be connected to a respective gate resistor. Diodes may be connected between various gate resistors. One or more resistor-capacitor (RC) snubber circuits may be provided in parallel with one or more of the transistors. Likewise, one or more metal-oxide varistors (MOVs) may be connected in parallel to one or more of the transistors. A gate driver (e.g., a single gate drive) may be connected to the one or more diodes and an emitter of at least one of transistors.

Single passive gate-driver for series connected power devices in DC circuit breaker applications

An inverter with a modular bus assembly is described. In various embodiments, the modular bus assembly includes a laminated motherboard and a plurality of capacitor daughtercards. The laminated motherboard can be configured to interface a plurality of phase-leg modules and a plurality of capacitor daughtercards through a plurality of terminals and connectors located on a bottom side or a top side of the laminated motherboard. The laminated motherboard includes a layer stack with a plurality of conductor layers. Each of the plurality of conductor layers is implemented with a net spacing from a neighboring plated through hole (PTH) based at least in part on differences in potential to be applied to each of the plurality of conductor layers as compared to a potential to be applied to the PTH. Embedded shield polygons can be implemented on the laminated motherboard to mitigate surface discharge at surface terminal (PTH/SMT) triple junctions.

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Blacksburg, VA, United States of America

Lakshmi Ravi