Hoechst Celanese Corporation

Other

Lakshaman Mahinda Walpita

James B Stamatoff

George L Lundberg

Michael R Ahern

A structure and methodology for providing electronic devices comprised of semiconductor materials deposited and crystallized using a pulsed laser source on oxide and/or metal layers on polymeric and polymer composite substrates of low coefficient of thermal expansion (CTE). The present invention permits the fabrication of inexpensive yet highly efficient electronic devices, such as photovoltaic cells, on the filled substrates by the use of laser annealing techniques.

Semiconductor crystallization on composite polymer substrates

A polymeric composition which has a dielectric constant K' greater than 4 at 20.degree. C. which varies little with temperature is made from a polymer or mixture of polymers and a ceramic or a mixture of ceramics, where the polymer or mixture of polymers has a dielectric constant K' in the range of about 1.5 to about 3.5 and a temperature coefficient of dielectric constant TCK' that is negative and is between 0 and about -300 ppm/degree C.; and the ceramic includes a first ceramic, which may be one ceramic or a mixture of ceramics, each having a dielectric constant in the range of about 15 to about 200 and a TCK' that is positive and is between zero and about 3000 ppm/degree C.; and an optional second ceramic, which may be one ceramic or a mixture of ceramics, each having a dielectric constant in the range from about 3 up to about 15 and a TCK' that is positive and is between zero and about 300 ppm/degree C.

Polymeric compositions having a temperature-stable dielectric constant

A low dielectric material made of a liquid crystal polymer, polytetrafluoroethylene, and hollow glass spheres. This material is a relatively low cost, low dielectric blend having good physical strength and chemical and temperature resistance.

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Basking Ridge, NJ, United States of America

Lakshaman Mahinda Walpita