International Business Machines Corporation

Lahir Shaik Adam

Bruce Bennett Doris

Sanjay C Mehta

Balasubramanian S Haran

Zhengmao Zhu

Semiconductor substrate with a deformed gate region and a method for the fabrication thereof. The semiconductor substrate has improved device performance compared to devices without a deformed gate region and decreased dopant loss compared to devices with deformed source/drain regions.

Stress memorization process improvement for improved technology performance

CMOS transistors are formed incorporating a gate electrode having tensely stressed spacers on the gate sidewalls of an n channel field effect transistor and having compressively stressed spacers on the gate sidewalls of a p channel field effect transistor to provide differentially stressed channels in respective transistors to increase carrier mobility in the respective channels.

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Wappingers Falls, NY, United States of America

Lahir Shaik Adam