Semiconductor Components Industries, LLC

Ladislav Seliga

Gary Horst Loechelt

Thierry Coffi Herve Yao

Moshe Agam

Jaroslav Pjencák

Michael John Seddon

Bruce Greenwood

Santosh Menon

Robert Davis

Radim Spetik

A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.

Configurable low ohmic power circuits

An electronic device can include a semiconductor layer having a primary surface, a drift region adjacent to the primary surface, a drain region adjacent to the drift region and extending deeper into the semiconductor layer as compared to the drift region, a resurf region spaced apart from the primary surface, an insulating layer overlying the drain region, and a contact extending through the insulating layer to the drain region. In an embodiment, the drain region can include a sinker region that allows a bulk breakdown to the resurf region to occur during an overvoltage event where the bulk breakdown occurs outside of the drift region, and in a particular embodiment, away from a shallow trench isolation structure or other sensitive structure.

Electronic device including a drift region

Process of forming an electronic device including a drift region, a sinker region and a resurf region

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Francova Lhota, Czechia

Ladislav Seliga