Siemens Aktiengesellschaft

Ladislaus Bittmann

Karl Weidner

Hans Wulkesch

Jörg Naundorf

In one embodiment of the present invention, a method is disclosed for contacting at least one electric contact surface on a surface of a substrate and/or a surface of a semiconductor chip arranged on a substrate. According to one embodiment of the invention, a film of electrically insulating plastic material is laminated onto the surfaces. A large-area contacting of the contact surfaces, which are freely accessible via the openings in the film, with a layer of electrically conductive material is then carried out. It is the aim of a planar electric contacting method to produce openings in an insulation during a short period of processing time. In particular, openings are to be positioned at a precise position to the contact surfaces. To achieve this, openings are produced in the film of electrically insulating plastic material in the region of the contact surface to be contacted by means of laser cutting and prior to laminating. This method is suitable for all planar contacting processes. Substrates or semiconductor chips which are contacted accordingly may be produced. The semiconductor chips used can be, in particular, power semiconductor chips.

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Munich, Germany

Ladislaus Bittmann