International Business Machines Corporation

L William Dewey, Iii

Peter Anton Habitz

Edward W Seibert

Judith H McCullen

Michael J Sullivan

Thomas G Mitchell

William C Bakker

A structure and method for extracting parasitic capacitance from a multi-layer wiring structure that creates, for each wiring layer in a wiring structure, a wiring density map and measures a plurality of metal segments in a wiring layer to determine an area occupied by the metal segments. The invention calculates an up area capacitance component for each of the metal segments by multiplying the area occupied by the metal segments by a wiring density from the wiring density map of an overlying wiring layer over the metal segments and by a capacitance coefficient of the overlying wiring layer. To calculate the down area capacitance component for each of the metal segments, the invention multiplies the area occupied by the metal segments by a wiring density, from the wiring density map of an underlying wiring layer under the metal segments and by a capacitance coefficient of the underlying wiring layer. The invention combines the up area capacitance component and the down area capacitance component to form a vertical coupling capacitance component for each of the metal segments.

Decoupled capacitance calculator for orthogonal wiring patterns

A method and structure for performing parasitic extraction for a multi-fingered device comprising of establishing a maximum processing width of a finger of the device, dividing fingers of the device that exceed the maximum width into sub-fingers, determining whether ones of the fingers and the sub-fingers have similar characteristics, combining ones of the fingers and the sub-fingers that have similar characteristics into combined fingers, and extracting parasitic values from the fingers, the sub-fingers and the combined fingers.

Method of performing parasitic extraction for a multi-fingered transistor

A structure and method for performing a capacitance extraction on an integrated circuit, includes determining a parallel-plate capacitance between devices on different levels within the integrated circuit, adding extension shapes around each of the devices, reducing an area of overlapping extension shapes, multiplying a remaining area of the extension shapes by a constant to produce a fringe capacitance; and summing the parallel-plate capacitance and the fringe capacitance.

Method of calculating 3-dimensional fringe characteristics using specially formed extension shapes

A method and structure for performing capacitance extraction during the design of an integrated circuit includes inputting a specified wiring density and design requirements, determining a minimum spacing for wire segments based on the design requirements, calculating a transparency factor based on the wiring density, calculating a lateral capacitance assuming virtual wires are present in the integrated circuit, and calculating a vertical capacitance based on the transparency factor.

Inclusion of global wires in capacitance extraction

A structure and method for evaluating an integrated circuit design includes adding a superseding layer of the integrated circuit design over a previous layer of the integrated circuit structure, identifying database pointers for regions and edges within the superseding layer and the previous layer, removing database pointers for regions of the previous layer overlapped by the superseding layer, classifying the superseding layer and the previous layer as the previous layer, and repeating the method until all layers of the integrated circuit are evaluated.

Efficient system for multi-level shape interactions

A method and structure for a method of determining characteristics of parasitic elements in an integrated circuit comprising, identifying manufacturing process parameters of devices in the integrated circuit, calculating a parasitic performance distribution for each of the devices based on the manufacturing process parameters, combining the parasitic performance distribution for each of the devices into a net parasitic value, and forming a parameterized model based on the net parasitic values.

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Wappingers Falls, NY, United States of America

L William Dewey, Iii