Carnegie Mellon University

Resonance Semiconductor Corporation

Ic Mechanics, Inc.

Other

Cadence Design Systems, Inc.

Cymatics Laboratories Corp.

L Richard Carley

Rajarishi Sinha

Hugo Fernando Safar

Louis Caley Chomas

Suresh Santhanam

Deok-Yang Kim

Gary Keith Fedder

Michael L Reed

Ram K Krishnamurthy

Takeo Kanade

Rob A Rutenbar

Jeyanandh Paramesh

Rodney Phelps

Susnata Mondal

Anthony Tsangaropoulos

Herman Henry Schmit

Ronald Alan Rohrer

Katsufumi Nakamura

Esa Tarvainen

Jaekyun J Moon

Hsu Yu-Nu

Andrew Gruss

Anthony J Gadient

Akshay Aggarwal

Disclosed herein is an innovative multi-layer hybrid/digital MIMO architecture that comprises single-stream or fully-connected (FC) multi-stream beamforming tiles (with RF complex-weights) in the first layer, followed by a fully connected (analog/digital) baseband layer. This architecture overcomes the complexity versus spectral-efficiency tradeoffs of existing hybrid MIMO architectures and enables MIMO stream/user scalability, superior energy-efficiency, and spatial-processing flexibility.

Scalable, multi-layer MIMO transceiver

Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.

Manufacturing method of an array of BAW resonators with mask controlled resonant frequencies

A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.

Devices having a tunable acoustic path length and methods for making same

A method of constructing devices using semiconductor manufacturing processes includes fabricating a device having a movable portion and a fixed portion. The movable portion is connected to the fixed portion only through at least one sacrificial layer. The sacrificial layer is removed in the presence of a force of sufficient strength so as to controllably reposition the movable portion during the release process. The force can be externally applied, generated locally as a result of, for example, the relative positions of the fixed and movable portions, or some combination of the two. Several devices constructed according to such a method are also disclosed.

Assembling and applying nano-electro-mechanical systems

A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.

Protected resonator

A switchable power combiner is disclosed. The switchable power combiner has an output section that is a signal source connected to a transformer section. The transformer section has one or more primaries and a common secondary. The transformer primaries and secondary are acoustically coupled. The primaries or/and the secondary are made of switchable piezoelectric material, such that the acoustic coupling between any primary and the secondary can be switched on or off by electrical control, thereby implementing a switchable power combiner. The transformer secondary is connected to an antenna port. The power amplifier output section is segmented and connected to the transformer primaries. The power amplifier output section has a plurality of power amplifiers and a plurality of reactance elements, either fixed or variable. The switchable power combiner generates different linear load lines by switching on and off the coupling between any primary and the secondary.

Switchable power combiner

A direct digital frequency synthesizer having a multi-modulus divider, a numerically controlled oscillator and a programmable delay generator. The multi-modulus divider receives an input clock having an input pulse frequency fand outputs some integer fraction of those pulses at an instantaneous frequency fthat is some integer fraction (1/P) of the input frequency. The multi-modulus divider selects between at least two ratios of P (1/P or 1/P+1) in response to a signal from the numerically controlled oscillator. The numerically controlled oscillator receives a value which is the accumulator increment (i.e. the number of divided pulse edges) required before an overflow occurs that causes the multi-modulus divider to change divider ratios in response to receiving an overflow signal. The numerically controlled oscillator also outputs both the overflow signal and a delay signal to the delay generator that further controls the frequency of the multi-modulus divider output signal (V) to provide an output signal (V) with an fthat has improved phase and timing jitter performance over prior art direct digital frequency synthesizer architectures.

Direct digital synthesizer for reference frequency generation

This invention comprises a process for fabricating a micro mechanical structure in a sealed cavity having a multi-layer high stiffness cap. The high stiffness material used for the cap protects the underlying microstructure from destructive environmental forces inherent in the packaging process and from environmental damage.

Micromachined assembly with a multi-layer cap defining a cavity

This invention comprises a process for fabricating a MEMS microstructure in a sealed cavity wherein the etchant entry holes are created as a by-product of the fabrication process without an additional step to etch holes in the cap layer. The process involves extending the layers of sacrificial material past the horizontal boundaries of the cap layer. The cap layer is supported by pillars formed by a deposition in holes etched through the sacrificial layers, and the etchant entry holes are formed when the excess sacrificial material is etched away, leaving voids between the pillars supporting the cap.

Encapsulation of MEMS devices using pillar-supported caps

In a method of automatically sizing and biasing a circuit, a database is provided including a plurality of records related to cells that can be utilized to form an integrated circuit. A cell parameter of a cell for a circuit is selected and compared to cell parameters residing in the records stored in the database. One record in the database is selected based upon this comparison and a performance characteristic of the circuit is determined from this record.

Method for automatically sizing and biasing circuits by means of a database

The disclosed fabrication methodology addresses the problem of creating low-cost micro-electro-mechanical devices and systems, and, in particular, addresses the problem of delicate microstructures being damaged by the surface tension created as a wet etchant evaporates. This disclosure demonstrates a method for employing a dry plasma etch process to release encapsulated microelectromechanical components.

Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation

This invention discloses a method for controlling the position of flexible portions of a mechanical structure by attaching one or more Momentum Transfer Actuators on the flexible portions of the mechanical structure near the points whose position is to be controlled, sensing the position of the flexible portions of the mechanical structure, and, employing one or more feedback loops, to control the Momentum Transfer Actuators to cause the flexible ends of the mechanical structure to follow a desired position as a function of time. The invention also addresses the use of combined actuating and sensing devices that incorporate both a Momentum Transfer Actuator and an inertial sensor to provide acceleration, velocity, and position information to the feedback control system.

Growing community of inventors

Sewickley, PA, United States of America

L Richard Carley