Ramtron International Corporation

L David Sikes

Donald G Carrigan

Michael Alwais

An integrated circuit memory device and method incorporating Flash and ferroelectric random access memory arrays integrated on a common substrate. The present invention allows a relatively small amount of ferroelectric random access memory to mitigate many of the erase and write time disadvantages exhibited by current Flash technology devices. In particular, whether combined together as a single stand-alone memory device or embedded together as a portion of a processor, microcontroller or application specific integrated circuit (&ldquo;ASIC&rdquo;), a block of ferroelectric memory that is sized to match the largest sector of Flash memory can effectively compensate for the latter's slow erasure and write times.

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Colorado Springs, CO, United States of America

L David Sikes