3m Innovative Properties Company

L Charles Hardy

Naiyong Jing

Steven Joseph Hamrock

Shane Shanhong Mao

Thomas Edward Wood

David A Kaisaki

Heather K Kranz

Patricia M Savu

John Charles Clark

John J Gagliardi

Jennifer L Trice

Michael S Terrazas

Michael J Sierakowski

Philip G Clark

Jennifer E Waddell

Bryan J Johnson

The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKgreater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.

Compositions and methods for modifying a surface suited for semiconductor fabrication

Electrolytic solutions containing organic additive(s) selected from a described class of additives (e.g., 4,6-dihydroxypyrimidine) reduce overall applied electrical potential of electrolytic cells and/or reduce gas formation at the anode(s) or increase copper production rate. Benefits include reducing overall power consumption and reducing acid mist during electrolytic processes.

Electrolytic processes with reduced cell voltage and gas formation

Methods are provided to make acid functional fluoropolymers by: a) dehydrofluorinating a starting fluoropolymer with a dehydrofluorinating agent to form an unsaturated fluoropolymer; b) adding an acidifiable nucleophilic functionalizing agent to a double bond of the unsaturated fluoropolymer; and c) acidifying the added acidifiable function. Acid functional fluoropolymers and ion conducting membranes thereof are also provided, including acid functional fluoropolymer having pendent groups according to the formula: &#x2014;X&#x2014;Ar&#x2014;A, wherein X is selected from O, S or NR, where R is selected from H and C1&#x2013;C30 alkyl or aryl, which are optionally substituted, wherein Ar is a C6&#x2013;C30 aromatic group, which is optionally substituted, wherein A is an acidic function or salt thereof, wherein a can be independently chosen to be 1, 2 or 3.

Acid functional fluoropolymer membranes and method of manufacture

Methods are provided to make acid functional fluoropolymers by: a) dehydrofluorinating a starting fluoropolymer with a dehydrofluorinating agent to form an unsaturated fluoropolymer; b) adding an acidifiable nucleophilic functionalizing agent to a double bond of the unsaturated fluoropolymer; and c) acidifying the added acidifiable function. Acid functional fluoropolymers and ion conducting membranes thereof are also provided, including acid functional fluoropolymer having pendent groups according to the formula: &mdash;X&mdash;Ar&mdash;A , wherein X is selected from O, S or NR, where R is selected from H and C1-C30 alkyl or aryl, which are optionally substituted, wherein Ar is a C6-C30 aromatic group, which is optionally substituted, wherein A is an acidic function or salt thereof, wherein a can be independently chosen to be 1, 2 or 3.

A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

Working liquids and methods for modifying structured wafers suited for semiconductor fabrication

This invention pertains to a method of modifying or refining a surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of a second material deployed over at least one discrete feature of a first material attached to the wafer. A first step of this method comprises contacting and relatively moving the exposed surface of the wafer with respect to an abrasive article, wherein the abrasive article comprises an exposed surface of a plurality of three-dimensional abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder and maintaining contact to effect removal of the second material. In a second step, the contact and relative motion are continued until an exposed surface of the wafer has at least one area of exposed first material and at least one area of exposed second material.

Growing community of inventors

Saint Paul, MN, United States of America

L Charles Hardy