Ulvac, Inc.

Nihon Shinku Gijutsu Kabushiki Kaisha

Brother Kogyo Kabushiki-Kaisha

Kyuzo Nakamura

Yoshifumi Ota

Noriaki Tani

Michio Ishikawa

Masanori Hashimoto

Satoru Ishibashi

Taiki Yamada

Hiroshi Nagata

Yoshinori Shingaki

Tomoyasu Kondo

Atsushi Nakatsuka

Ryou Yoshiizumi

Masami Itou

Ichirou Mukae

Takeo Katou

Harunori Ushikawa

Satoru Toyoda

Narishi Gonohe

Hirohisa Takahashi

Yasushi Higuchi

Takashi Hanamoto

Yumiko Ohashi

Satoru Takasawa

Takashi Komatsu

Sadayuki Ukishima

Kazuya Saito

Koukou Suu

Junpei Yuyama

Naoki Morimoto

Takeo Kato

Seiichi Sato

Kazuyuki Ito

Haruhiko Yamamoto

Masaki Itou

Shin Asari

Tsutomu Asaka

Jun Togawa

Yuzo Murata

Katsuhiko Itou

Mitsuru Yahagi

Seiichi Takahashi

Masao Murata

Seiji Ogata

Masahisa Ueda

Makoto Arai

Hidenori Suwa

Junya Kiyota

Masaki Takei

Motoshi Kobayashi

Kouji Shibayama

Toshiya Yogo

Toshiharu Kurauchi

Hiroaki Katagiri

Daisuke Mori

Yasuhiko Akamatsu

Shinichi Wada

Takahiro Miyata

Takashi Kurimoto

Kou Fuwa

Tadashi Oka

Ken Momono

Yoshifumi Ohta

Akio Ito

Takao Kinoshita

Kazushige Komatsu

Ryuuichi Terajima

Yukio Masuda

Yoshiyasu Tajima

Yoshio Sunaga

Nobusuke Tachibana

Seiya Sakoda

Yuuichi Oishi

Tadayuki Satou

Tomiyuki Yukawa

Atsushi Kira

Ai Tanaka

Tooru Okuno

Susumu Sakio

Taro Morimura

Toru Kikuchi

An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Ashing device

[Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles. [Solving Means] The freeze-drying apparatusincludes a freezing chamberinto which a raw material fluid F is injected. During the injection of the raw material fluid F, after the injection of the raw material fluid F, or for a time period covering the start to the termination of the injection of the raw material fluid F, a shelfis vibrated in a horizontal direction due to an actuation of vibration generators. With this, the frozen particles deposited on the shelfare evenly diffused on the shelfin such a manner that a deposition thickness thereof becomes smaller or a single layer thereof is formed. With this, a freezing efficiency and the drying efficiency of individual particles are promoted.

Freeze-drying apparatus and freeze-drying method

A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N&#x2550;(R, R') (wherein, R and R&#x2032; each represents an alkyl group having 1 to 6 carbon atoms) and NHgas into a film-forming chamber; reacting the raw gas with the NHgas; forming a reduced compound having Ta&#x2014;NHon a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.

Method for forming tantalum nitride film

A gate valve includes: a valve box; a support body disposed inside a hollow portion; a valve plate including a fixed valving section, a movable valving section sliding in a direction in which a flow passage is extended, a first peripheral region; and a second peripheral region; a first biasing section disposed at the first peripheral region, allowing the movable valving section to move toward a first opening portion, allowing the movable valving section to come into contact with an inner surface, pressing the movable valving section onto the inner surface, and closing the flow passage; and a second biasing section disposed at the second peripheral region, allowing the movable valving section to move toward a second opening portion, and releasing the flow passage by separating the movable valving section from the inner surface.

Gate valve

An electrostatic chuck is provided which is arranged that, at the time of performing processing treatments of irradiating light to a to-be-processed substrate while holding the translucent to-be-processed substrate, the to-be-processed substrate can surely be held even in case the attraction force lowers due to photoelectric effect. An electrostatic chuck has a chuck plate made of a dielectric material, and a first electrode and a second electrode, both electrodes being disposed in the chuck plate. A voltage is applied between the first and the second electrodes to thereby attract the to-be-processed substrate S to the surface of the chuck plate. The electrostatic chuck has, on part of the surface of the chuck plate, a substrate holding sectionwhich is made of an adhesive sheet and the like having an adhesive force with respect to the to-be-processed substrate.

Electrostatic chuck and vacuum processing apparatus

A coated film with no observable streak is formed. The landing positions of a first discharge liquid discharged through a first printing head and the landing positions of a second discharge liquid discharged through a second printing head are disposed in a mixed manner in an area on a substrate where the first printing head and the second printing head overlap. Which discharge liquids are to be landed is determined according to random numbers. Since a coated film which is formed with the first and second discharge liquids in a mixed manner is disposed between a coated film formed with the first discharge liquids and a coated film formed with the second discharge liquids, a boundary is obscured and no streak appears.

Coated film forming method

[Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor. [Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.

Method of producing thin film transistor and thin film transistor

A permanent magnet is provided which has formed a Dy, Tb film on a surface of an iron-boron-rare earth sintered magnet of a predetermined shape, with diffusion thereof into grain boundary phases, having a higher coercive force. The method of manufacturing a permanent magnet includes a film-forming step of evaporating metal evaporating material containing at least one of Dy and Tb and adhering evaporated metal atoms to a surface of the iron-boron-rare earth sintered magnet, and a diffusing step of performing heat treatment to diffuse metal atoms adhered to the surface into grain boundary phases of the sintered magnet. The metal evaporating material contains at least one of Nd and Pr.

Permanent magnet and method of manufacturing same

A processing gas is introduced to remove an oxide film on the surface of a silicon substrate. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NHgas, Ngas and NFgas are introduced, allowing NHFto act on the oxidized surface of the silicon substrate, thereby forming (NH)SiF. The resulting (NH)SiFis sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate

Vacuum processing method and vacuum processing apparatus

There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.

Cathode unit and sputtering apparatus provided with the same

A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.

Manufacturing method for solar cell

There is provided a vacuum evaporating apparatus which is suitable for performing a process in which a metal vapor atmosphere is formed in a processing chamber, the metal atoms in this metal vapor atmosphere are caused to be adhered to the surface of an object to be processed, and the metal atoms adhered to the surface of the object to be processed are diffused into grain boundary phases thereof. The apparatus comprises: a processing furnace (); at least one processing box () disposed inside the processing furnace; and a heating means () provided inside the processing furnace so as to enclose the processing box. An evacuating means is provided which, after housing the processing box inside the processing furnace in a state in which the object to be processed (S) and the metal evaporating material (V) are disposed in the processing box, reduces the processing furnace and the processing box to a predetermined pressure and keep them at that pressure. The heating means is operated in the reduced pressure to evaporate the metal evaporating material while increasing the object to be processed to a predetermined temperature. The evaporated metal atoms are supplied to the surface of the object to be processed.

Vacuum vapor processing apparatus

A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of &#x2212;70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.

Vacuum freeze-drying apparatus and method for vacuum freeze drying

There is provided a method of manufacturing a permanent magnet which has an extremely high coercive force and high magnetic properties is manufactured at high productivity. There are executed: a first step of causing at least one of Dy and Tb to adhere to at least part of a surface of iron-boron-rare-earth based sintered magnet; and a second step of diffusing, through heat-treatment at a predetermined temperature, at least one of Dy and Tb adhered to the surface of the sintered magnet into grain boundary phase of the sintered magnet. As the sintered magnet, there is used one which is manufactured by: mixing each powder of principal phase alloy (constituted primarily by RTB phase, where R is at least one rare earth element primarily including Nd and where T is a transition metal primarily including Fe), and a liquid phase alloy (having a higher content of R than RTB phase and primarily constituted by R-rich phase) in a predetermined mixing ratio; press-forming in magnetic field a mixed powder thus obtained; and sintering a press-formed body in vacuum or inert gas atmosphere.

The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

Magnetron sputtering apparatus and magnetron sputtering method

Growing community of inventors

Chigasaki, Japan

Kyuzo Nakamura