Samsung Electronics Co., Ltd.

Kyuwon Choi

Chanho Lee

Taehyung Kim

Jongchul Choi

Dongil Son

Hyunsuk Kim

Youngsun Lee

Inhak Lee

Jongmin Jeon

Sangyeop Baeck

Suk Youn

Hyeongcheol Kim

A static random access memory includes a memory cell that stores data, a reference voltage generator that generates a reference voltage, a precharge circuit that is connected with the memory cell through a bit line, is connected with the reference voltage generator through a reference bit line, and pre-charges the bit line and the reference bit line, and a sense amplifier that is connected with the bit line and the reference bit line, compares a voltage of the bit line and a voltage of the reference bit line to generate a comparison result, and determines a value of the data stored in the memory cell based on the comparison result. The reference voltage generator includes first-type transistors.

SRAM including reference voltage generator and read method thereof

A flexible printed circuit board (FPCB) of an electronic device including a flexible display having a shape deformed by a hinge structure is provided. The FPCB of an electronic device includes a plurality of bending portions and a plurality of non-bending portions. The plurality of bending portions is bent according to a deformation of a shape of the electronic device. The plurality of non-bending portions are positioned on a periphery of the plurality of bending portions. The plurality of bending portions and the plurality of non-bending portions are formed to have different thicknesses.

Flexible printed circuit board and electronic device including the same

A semiconductor device includes a substrate including a first memory cell, a second memory cell adjacent to the first memory cell in a first direction, and a comparator circuit adjacent to the first and second memory cells in a second direction intersecting the first direction; a true bit line and a complementary bit line electrically connected to the first and second memory cells and extending in the first direction from a first wiring layer on the substrate; a first power supply wiring on the first wiring layer, extending in the first direction between the true bit line and the complementary bit line and electrically connected to the first and second memory cells; first and second word lines extending in the second direction from a second wiring layer on the substrate different from the first wiring layer; first word line pads on the first wiring layer and electrically connecting the first memory cell to the first word line; second word line pads on the first wiring layer and electrically connecting the second memory cell to the second word line; and a first ground pad on the first wiring layer, electrically connected to the first and second memory cells, and in a same position as one of the first word line pads and one of the second word line pads in the second direction.

Semiconductor device

A connector of an electronic device and an electronic device having the same are provided. The connector of an electronic device may includes a mold fixed on a main board of the electronic device; a first connection pin having a first connecting portion protruded to one surface of the mold; and a second connecting portion separated from the mold and an extension that connects the second connecting portion and the mold.

Connector of electronic device and electronic device having the same

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Gyeonggi-do, South Korea

Kyuwon Choi