Samsung Electronics Co., Ltd.

Kyuok Lee

Suyeon Cho

Jaehyun Yoo

Jungkyung Kim

Uihui Kwon

Yongwoo Jeon

Jaehyok Ko

Jaejune Jang

Kyu-Heon Cho

JaeHyun Jung

Junhyeok Kim

Dawon Jeong

Wonpyo Hong

Minhwan Kim

Changki Jeon

Juhyeon Song

Seonghoon Ko

A semiconductor protection device includes: an N-type epitaxial layer, a device isolation layer disposed in the N-type epitaxial layer, an N-type drift region disposed below the device isolation layer, an N-type well disposed in the N-type drift region, first and second P-type drift regions, respectively disposed to be in contact with the device isolation layer, and spaced apart from the N-type drift region, first and second P-type doped regions, respectively disposed in the first and second P-type drift regions, first and second N-type floating wells, respectively disposed in the first and second P-type drift regions to be spaced apart from the first and second P-type doped regions, and disposed to be in contact with the device isolation layer, and first and second contact layer, respectively disposed to cover the first and second N-type floating well, to be in contact with the device isolation layer.

Semiconductor protection device

A semiconductor device includes a semiconductor substrate. A drift region is disposed in the semiconductor substrate. The drift region has a first conductivity type. A body region is disposed in the semiconductor substrate, adjacent to the drift region. The body region has a second conductivity type. A drain region is disposed opposite to the body region in the drift region. A drain isolation insulating film is disposed in a portion adjacent to the drain region of the drift region. A gate insulating film is disposed on the semiconductor substrate and is extended over a portion of the body region and a portion of the drift region. A gate electrode is disposed on the gate insulating film and the gate electrode has at least one closed-type opening.

Semiconductor devices having a metal oxide semiconductor structure

A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area.

Semiconductor device

Growing community of inventors

Yongin-si, South Korea

Kyuok Lee