Samsung Electronics Co., Ltd.

Ulsan National Institute of Science and Technology

Kyungyeol Ma

Hyeonjin Shin

Changseok Lee

Hyeonsuk Shin

Seokmo Hong

Seunggeol Nam

Minhyun Lee

Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.

Method of fabricating hexagonal boron nitride

A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer

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Ulsan, South Korea

Kyungyeol Ma