Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Lg Electronics Inc.

Corning Incorporated

Corning Precision Materials Co., Ltd.

Kyungwook Park

Yoongoo Kang

Dain Lee

Wonseok Yoo

Hauk Han

Taisoo Lim

Hokyun An

Changwoo Seo

Suyoun Song

Changwoo Lee

Bio Kim

Keun Young Lee

Kihwang Kim

Seohyun Kim

Sangmin Kang

Young Zo Yoo

Kyungmin Yoon

Jinwon Ma

Hoikwan Lee

Seo-Yeong Cho

Jeong Woo Park

Bokyung Kong

Keun Hyo Lee

Jaeyoung Choi

Keun Won Lee

Jongkwon Park

Jongsung Lee

Jeayoung Choi

Yunyoung Kwon

Gennady Kizevich

Wangyup Ryu

Gunsang Yoon

Yoonyoung Kwon

Jinsu Nam

A semiconductor device includes a peripheral circuit structure including: a first substrate, circuit devices on the first substrate, a lower wiring structure electrically connected to the circuit devices, a lower insulating layer covering the lower wiring structure, and a diffusion barrier layer on the lower insulating layer; and a memory cell structure including a second substrate including first and second regions on the peripheral circuit structure, gate electrodes stacked and spaced apart from each other in a first direction perpendicular to an upper surface of the second substrate in the first region and extending in a second direction perpendicular to the first direction to form a staircase shape in the second region, and channel structures penetrating the gate electrodes in the first direction and each including a channel layer. The diffusion barrier layer includes a first material layer having a hydrogen permeability lower than a hydrogen permeability of silicon nitride.

Semiconductor devices and data storage systems including the same

A semiconductor device may include contact plug structures on a substrate, and an insulation structure filling a space between the contact plug structures to insulate the contact plug structures from each other. The contact plug structures may be spaced apart from each other in a first direction. The insulation structure may include a first insulation pattern and a second insulation pattern. The second insulation pattern may include an insulation material having an etch selectivity with respect to silicon oxide. The first insulation pattern may contact a portion of sidewalls of the second insulation pattern and a portion of sidewalls of the contact plug structure. The first insulation pattern may include a material having a band gap higher than a band gap of the second insulation pattern.

Semiconductor device

A refrigerator includes an inner case including (i) a refrigerating case that defines a refrigerator compartment and (ii) a freezing case that defines a freezer compartment, an outer case disposed outside the inner case, a connection duct disposed between the inner case and the outer case, and a refrigerator compartment cold air supply duct that is detachably coupled to a rear inner surface of the refrigerating case and in fluid communication with the connection duct. The connection duct and the refrigerator compartment cold air supply duct are in communication on a rear surface of the refrigerating case with the refrigerating case interposed therebetween, thereby reducing the area occupied by the refrigerator compartment cold air supply duct disposed in the rear inner surface of the refrigerator compartment.

Refrigerator

A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.

Method for manufacturing semiconductor device including air gap

A debonding support device includes a suction plate including a support region for supporting a glass assembly, the support region including at least two suction regions applying different suction forces per unit area, the suction regions including a debonding initiation portion suction region for sucking a debonding initiation portion at which debonding of the glass assembly is to be initiated, the debonding initiation portion suction region applying the strongest of the different suction forces per unit area; a vacuum pump connected to the suction plate to provide a vacuum pressure for the suction plate, and a controller.

Apparatus of supporting debonding and method for debonding using the same

A semiconductor device includes gate electrodes and interlayer insulating layers that are alternately stacked on a substrate, channel structures spaced apart from each other in a first direction and extending vertically through the gate electrodes and the interlayer insulating layers to the substrate, and a first separation region extending vertically through the gate electrodes and the interlayer insulating layers. Each gate electrode includes a first conductive layer and a second conductive layer, the first conductive layer disposed between the second conductive layer and each of two adjacent interlayer insulating layers. In a first region, between an outermost channel structure and the first separation region, of each gate electrode, the first conductive layer has a decreasing thickness toward the first separation region and the second conductive layer has an increasing thickness toward the first separation region.

Semiconductor device and apparatus of manufacturing the same

A DRAM device includes an isolation region defining source and drain regions in a substrate, a first bit line structure connected to the source region, a second bit line structure disposed on the isolation region, an inner spacer vertically extending on a first sidewall of the first bit line structure, an air gap is between the inner spacer and an outer spacer, a storage contact between the first and second bit line structures and connected to the drain region, a landing pad structure vertically on the storage contact, and a storage structure vertically on the landing pad structure. The sealing layer seals a top of the first air gap. The sealing layer includes a first sealing layer on a first sidewall of a pad isolation trench, and a second sealing layer on a second sidewall of the pad isolation trench and separated from the first sealing layer.

DRAM device including an air gap and a sealing layer

A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.

Methods of manufacturing semiconductor devices and apparatuses for manufacturing the same

An integrated circuit device includes a conductive line formed on a substrate, an insulating spacer covering side walls of the conductive line and extending parallel with the conductive line, and a conductive plug that is spaced apart from the conductive line with the insulating spacer therebetween. The insulating spacer includes an insulating liner contacting the conductive line, an outer spacer contacting the conductive plug, and a barrier layer between the insulating liner and the outer spacer to prevent oxygen atoms from diffusing into the outer spacer.

Integrated circuit device

Provided is a method of preparing a light scattering layer including voids as a light scattering enhancer instead of metal oxide particles. Provided is also a light scattering layer including voids as a light scattering enhancer instead of metal oxide particles. Provided is also an organic electroluminescent device including the light scattering layer that includes voids as the light scattering enhancer instead of metal oxide particles.

Method of preparing light scattering layer

Disclosed is a light-emitting device including a support member, a reflective layer on the support member, a light-transmitting electrode layer on the reflective layer, a light-emitting structure on the light-transmitting electrode layer, the light-emitting structure being provided with a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a luminescence layer interposed between the reflective layer and the light-transmitting electrode layer. Accordingly, the luminescence layer is formed in the chip formation process to minimize non-uniform application of a phosphor composed of an epoxy resin and simplify fabrication of the light-emitting device.

Light-emitting device and lighting system

Disclosed is a light-emitting device including a conductive support substrate, a reflective layer arranged on the conductive support substrate, a first electrode layer arranged on the reflective layer and provided with a step in at least one region of the edge thereof, a protective layer arranged on the step, and a light-emitting structure arranged on the first electrode layer and the protective layer, the light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein at least one region of the reflective layer and the first electrode layer vertically overlaps the protective layer. Based on this configuration, the light-emitting device can exhibit improved adhesion between the electrode layer and the reflective layer and be provided with a wider reflective layer, thus improving brightness.

Light-emitting device and fabrication method thereof

Growing community of inventors

Seoul, South Korea

Kyungwook Park