Samsung Electronics Co., Ltd.

Kyungseok Son

Sangyoon Lee

Taesang Kim

Jangyeon Kwon

Jisim Jung

Youngsoo Park

Changjung Kim

Byungwook Yoo

Kyungbae Park

Myungkwan Ryu

A display apparatus may include: a flexible base having a first surface and a second surface; a hard base including a plurality of base members adhered onto the first surface of the flexible base; and/or an image display structure formed on the second surface of the flexible base. A method of manufacturing a display apparatus may include: preparing a flexible base having a first surface and a second surface; adhering a hard base onto the first surface of the flexible base; forming an image display structure on the second surface of the flexible base; and/or dividing the hard base into a plurality of base members.

Display apparatuses and methods of fabricating the same

Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100&#xb0; C. or above.

Methods of manufacturing oxide semiconductor thin film transistor

Growing community of inventors

Seoul, South Korea

Kyungseok Son