Samsung Electronics Co., Ltd.

Kyungrae Byun

Changhwa Kim

Beom Suk Lee

Junghun Kim

Sangsu Park

Sejung Park

Jongchul Park

Jong-Kyu Kim

JungChak Ahn

Dongchan Kim

Doowon Kwon

Jung-Ik Oh

Minho Jang

Gwang-Hyun Baek

Hyun-woo Yang

Bokwon Kim

Hyunyoung Yeo

An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.

Image sensor chip

An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

Image sensor

Image sensors having separation structures

A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Semiconductor device having magnetic tunnel junction structure and method of forming the same

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Suwon-si, South Korea

Kyungrae Byun