Stats Chippac Pte. Ltd.

Samsung Electronics Co., Ltd.

KyungMoon Kim

HeeJo Chi

YoungChul Kim

Pandi Chelvam Marimuthu

Lan H Hoang

JaeHak Yee

Steve Anderson

KooHong Lee

HunTeak Lee

HanGil Shin

Dongjin Lee

Jaeyoung Lee

See Chian Lim

KeoChang Lee

SooSan Park

KeonTaek Kang

Heesoo Lee

Kichan Sung

Yikeun Park

Goo Lee

The present document relates to an electronic device, a method for providing personal information using same, and a computer-readable recording medium for recording same, wherein the electronic device may include a communication circuit, a storage, a display, and a processor. According to various embodiments, the processor may be configured to generate a smart contract comprising information on categories of personal information to be provided to an external user, information about the external user, and information about a de-identification level of the personal information to be provided; transfer the smart contract to a block chain; receive a request for provision of personal information from the block chain; process personal information of a user on the basis of the smart contract; and transfer the processed personal information to the block chain. Other various embodiments are possible.

Electronic device, method for providing personal information using same, and computer-readable recording medium for recording same

A semiconductor device has a partition fence disposed between a first attach area and a second attach area on a substrate. A first electrical component is disposed over the first attach area. A second electrical component is disposed over the second attach area. The partition fence extends above and along a length of the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and partition fence. A portion of the encapsulant is removed to expose a surface of the partition fence and planarizing the encapsulant. A shielding layer is formed over the encapsulant and in contact with the surface of the partition fence. The combination of the partition fence and shielding layer compartmentalize the first electrical component and second electrical component for physical and electrical isolation to reduce the influence of EMI, RFI, and other inter-device interference.

Semiconductor device and method of forming partition fence and shielding layer around semiconductor components

Methods of forming conductive and insulating layers for semiconductor devices and packages. Substrate is provided with integrated circuit device and interconnect structure mounted thereon, the interconnect structure adjacent the integrated circuit device. The integrated circuit device and portions of the interconnect structure can be covered with an encapsulation exposing a portion of the interconnect structure. Conductive material is formed over the exposed portion of the interconnect structure by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated.

Methods of forming conductive and insulating layers

A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate.

Semiconductor device and method of bonding semiconductor die to substrate in reconstituted wafer form

Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package.

Methods of manufacturing flip chip semiconductor packages using double-sided thermal compression bonding

A semiconductor device has a semiconductor die disposed over a substrate. The semiconductor die and substrate are placed in a chase mold. An encapsulant is deposited over and between the semiconductor die and substrate simultaneous with bonding the semiconductor die to the substrate in the chase mold. The semiconductor die is bonded to the substrate using thermocompression by application of force and elevated temperature. An electrical interconnect structure, such as a bump, pillar bump, or stud bump, is formed over the semiconductor die. A flux material is deposited over the interconnect structure. A solder paste or SOP is deposited over a conductive layer of the substrate. The flux material and SOP provide temporary bond between the semiconductor die and substrate. The interconnect structure is bonded to the SOP. Alternatively, the interconnect structure can be bonded directly to the conductive layer of the substrate, with or without the flux material.

Semiconductor device and method of simultaneous molding and thermalcompression bonding

A semiconductor device includes a substrate with contact pads. A mask is disposed over the substrate. Aluminum-wettable conductive paste is printed over the contact pads of the substrate. A semiconductor die is disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure over the contact pads of the substrate. The contact pads include aluminum. Contact pads of the semiconductor die are disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate. The interconnect structure is formed directly on the contact pads of the substrate and semiconductor die. The contact pads of the semiconductor die are etched prior to reflowing the aluminum-wettable conductive paste. An epoxy pre-dot to maintain a separation between the semiconductor die and substrate.

Semiconductor device and method of making bumpless flipchip interconnect structures

Growing community of inventors

Gyeonggi-do, South Korea

KyungMoon Kim