Lg Display Co., Ltd.

Kyungmo Son

Sungjin Lee

YoungJang Lee

Sohyung Lee

Moonho Park

Mijin Jeong

JaeHoon Park

Hoyoung Jung

Seunghyo Ko

Seongpil Cho

Sangsoon Noh

ShunYoung Yang

Sunghoon Kim

JaeHyun Kim

Dongchae Shin

Jaehoon Park

A display device can include multiple layers, and a capacitor on the multiple layers. The capacitor can include one capacitor electrode and the other capacitor electrode, in which the one capacitor electrode is on a layer where a first gate electrode of a first thin film transistor is disposed on, and an electrode disposed on a layer where the other capacitor electrode is disposed on and made of same material with the other capacitor electrode overlaps a second thin film transistor. The display device can further include a first planarization layer and a second planarization layer on the first thin film transistor and the second thin film transistor, and a source electrode of the first thin film transistor between the first and second planarization layers.

Display device including a plurality of thin film transistors with different characteristics

Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.

Display device

Embodiments of the disclosure are related to polyimide substrates and display devices, a plurality of intaglio patterns are formed on at least a portion of one surface of a polyimide substrate, a high transmissive filling is disposed inside the intaglio pattern, thus an overall transmittance of the polyimide substrate is enhanced. Furthermore, the filling having a certain range of a coefficient of thermal expansion is disposed in the intaglio pattern to maintain a heat resistance of the polyimide substrate, an element being required a high temperature process could be disposed on the polyimide substrate having an enhanced transmittance.

Polyimide substrate including intaglio patterns and display device including the same

Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Thin film transistor substrate with intermediate insulating layer and display using the same

A display device comprises a display panel in which a plurality of subpixels are disposed, wherein the plurality of subpixels include a first subpixel, a second subpixel, a third subpixel, and a fourth subpixel that are sequentially disposed in a single row or column; a gate driver disposed on the display panel and supplying a scanning signal to the plurality of subpixels; a first island pattern disposed in each area of the first subpixel and the third subpixel; a second island pattern disposed in each area of the second subpixel and the fourth subpixel; a first connection line electrically connecting the first island pattern disposed in the area of the first subpixel and the first island pattern disposed in the area of the third subpixel; and a second connection line electrically connecting second island pattern disposed in the area of the second subpixel and the second island pattern disposed in the area of the fourth subpixel, wherein the first connection line and the second connection line are electrically disconnected from each other, and the gate driver independently drives the first connection line and the second connection line.

Display panel and display device

Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Thin film transistor substrate and display using the same

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

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Gyeonggi-do, South Korea

Kyungmo Son