Samsung Electronics Co., Ltd.

Lg Innotek Co., Ltd.

Lg Electronics Inc.

Kyunghwan Lee

Yongseok Kim

Hyuncheol Kim

Jaeho Hong

Sungwon Yoo

Dongsoo Woo

Kohji Kanamori

Satoru Yamada

Junhee Lim

Hyeoungwon Seo

Ilgweon Kim

Huijung Kim

Kwangjoo Kim

Jongman Park

Youngdeog Koh

Seokhan Park

Minjun Lee

Taehun Kim

Minsoo Kim

Tae Hun Kim

Kiseok Lee

Minkyung Lee

Minhee Cho

Junhyuk Lee

Byoung-taek Kim

Dongkyun Seo

Jinju Kim

Hui-Jung Kim

Jaejin Lee

Jeehoon Han

Insu Song

Min Hee Cho

Daewon Ha

Byunghwa Lee

Insun Lee

Hyunmog Park

Sungil Park

Dongoh Kim

Jiyoung Kang

Jungho Park

Changseok Kang

Soohyung Kim

Jaeyoung Han

Jaehyuk Kang

Daekwan Kim

Yohwan Noh

Jiyoung Song

Jiho Lee

Cheonan Lee

Kwangsoo Kim

Kwangsoo Han

Mirae Jeong

Sejeong Kwon

Choongkeon Kim

Sangrok Oh

Unghwan Pi

Jihwan Chun

Hyonsok Lee

Jeonghyeon Lee

Guetae Cho

Wookdam Jung

Yonglim Lee

Minhan Shin

Yeongil Kim

Yul Kim

Wonsuk Yang

Inheon Kang

Minwhan Kim

Dosoo Sung

A three-dimensional semiconductor device comprises a first active region on a substrate and including a lower channel pattern and a lower source/drain pattern connected to the lower channel pattern, a second active region stacked on the first active region and including an upper channel pattern and an upper source/drain pattern connected to the upper channel pattern, a gate electrode on the lower channel pattern and the upper channel pattern, a first active contact electrically connected to the lower source/drain pattern, an upper separation structure between the first active contact and the upper source/drain pattern, a second active contact electrically connected to the upper source/drain pattern, and a lower separation structure between the second active contact and the lower source/drain pattern.

Three-dimensional semiconductor device and method of fabricating the same

The devices, systems, methods, and techniques described herein provide for efficient operation of a user equipment (UE) configured to support mobility mechanisms while using connected mode discontinuous reception (CDRX). In some aspects, a UE configured to use CDRX may measure objects according to a No DRX minimum measurement period (e.g., a minimum measurement period configured when no DRX is used). Because the No DRX minimum measurement period may be shorter than a DRX minimum measurement period, the UE may be able to measure objects more frequently and improve mobility performance. Further, although the UE may perform measurements according to the No DRX minimum measurement period, the UE may still report the measurements according to a DRX minimum measurement period. Thus, the UE may report measurements less frequently, and the UE may sleep during more off-durations of a CDRX cycle, resulting in reduced power consumption.

Operation method of user equipment using connected mode discontinuous reception

An example wearable electronic device may include a main body including a first surface having an opening area formed therein, wherein a plurality of lateral walls, surrounding at least one part of the opening area, are formed in the peripheral area of the opening area; a display disposed inside the main body and which is viewable through the opening area; a wheel including a mounted part, which is at least partially mounted on the peripheral area, and an extension part which extends in the inward direction from the mounted part, wherein the wheel is formed in a ring shape extending in the circumferential direction with respect to a rotation axis of the wheel; and a guide member partially coming into contact with the main body and the wheel, respectively, and for guiding the rotation of the wheel. The guide member may include a first part having at least one portion thereof extending to a space between the plurality of lateral walls and a second part at least partially inserted to a first recess formed in each of the plurality of lateral walls.

Wearable electronic device including wheel

An example earphone includes a housing having a speaker module embedded therein and an ear tip connected to the housing. The housing includes a coupling portion having a sound hole formed in an end portion thereof. The ear tip includes a first tip including a first hollow aligned with the sound hole in a first direction and a first sidewall that surrounds the first hollow and a second tip including a second hollow in which the first tip is accommodated and a second sidewall that surrounds the second hollow, the first direction being a direction toward the speaker module from the sound hole. The first tip includes a first connecting portion having a protrusion form on an end portion thereof in the first direction. The coupling portion includes, on one surface thereof, a second connecting portion including a groove with which the first connecting portion is engaged. A connection gap is formed between facing surfaces of the first connecting portion and the second connecting portion, and the coupling portion of the housing and the ear tip are connected so as to be rotatable relative to each other.

Earphone including rotatable ear tip

An exterior material may be configured to form an exterior of a home appliance, the exterior material includes a base material having a hierarchical circular structure pattern on the surface. The hierarchical circular structure pattern may include a plurality of circular structures having diameters different from each other, and a pattern density may be, in percentage of area of the surface, about 20 to 90%.

Exterior material for home appliance

A semiconductor memory device is provided. The semiconductor memory device includes a substrate; a transistor disposed above the substrate, the transistor having a channel region defining an inner space; and a capacitor passing through the transistor in a vertical direction in the inner space.

Semiconductor memory device

A decoration panel for home appliances having excellent reflectivity and durability, the decoration panel being applicable to outer sides of various home appliances, a home appliance including the decoration panel, and a method for manufacturing the decoration panel. More specifically, the decoration panel for home appliances includes: an aluminum substrate with one surface in which an engraved pattern having a preset width and a preset depth is formed, the engraved pattern having micro unevenness formed in a surface of the engraved pattern; a porous aluminum oxide layer formed on the engraved pattern; and a sealing layer formed to close a plurality of pores of the porous aluminum oxide layer, wherein an edge of the aluminum substrate is in a Chamfering (C) shape or a Rounding (R) shape.

Decoration panel for home appliances, home appliance including the same, and method for manufacturing the decoration panel

A semiconductor device includes a plurality of first conductive lines extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, the first direction and second direction being horizontal directions, a plurality of vertical semiconductor patterns disposed on the plurality of first conductive lines, respectively, a gate electrode crossing the plurality of first conductive lines and penetrating each of the plurality of vertical semiconductor patterns, a ferroelectric pattern between the gate electrode and each of the plurality of vertical semiconductor patterns, and a gate insulating pattern between the ferroelectric pattern and each of the plurality of vertical semiconductor patterns.

Vertical channel semiconductor device with ferroelectric-insulator gate stack

Provided is a mobile terminal further comprising: a first frame; a second frame which is converted from a first state to a second state by moving in a first direction from the first frame, and which is converted from the second state to the first state by sliding in a second direction opposite to the first direction; a slide frame which moves in the first direction or the second direction with respect to the second frame, in correspondence to the sliding movement of the second frame; a flexible display part which comprises a first region coupled to the first frame, a second region coupled to the slide frame, and a third frame positioned between the first region and the second region and bending and surrounding the second frame; a rolling plate which couples to the rear surface of the second region of the display part, and which is capable of bending deformation in the first direction; and a slide curtain which covers at least a portion of an end, in the third direction perpendicular to the first direction, of the rolling plate, wherein the slide curtain moves together with the second frame.

Mobile terminal

A memory device is provided. The memory device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a first source/drain at one end of the fin structure, and a second source/drain at the other end of the fin structure, wherein the gate structure includes a trap layer, a blocking layer, and a gate electrode layer sequentially stacked on the fin structure, the first source/drain is doped with or has incorporated therein dopants of a first conductivity-type, and the second source/drain is doped with or has incorporated therein dopants of a second conductivity-type dopants that are different from the dopants of the first conductivity-type.

Memory device

A semiconductor device including a substrate including a cell array region and a connection region, an electrode structure stacked on the substrate, each of the electrodes including a line portion on the cell array region and a pad portion on the connection region, Vertical patterns penetrating the electrode structure, a cell contact on the connection region and connected to the pad portion, an insulating pillar below the cell contact, with the pad portion interposed therebetween may be provided. The pad portion may include a first portion having a top surface higher than the line portion, and a second portion including a first protruding portion, the first protruding portion extending from the first portion toward the substrate and covering a top surface of the insulating pillar.

Semiconductor device and electronic system including the same

Disclosed is a semiconductor memory device including a substrate, a plurality of source lines extending in a first direction on the substrate, a plurality of word lines crossing the source lines and extending in a second direction different from the first direction, a plurality of bit lines crossing the source lines and the word lines and extending in a third direction different from the first direction and the second direction, and a plurality of memory cells disposed at intersections between the source lines, the word lines, and the bit lines. The first, second, and third directions are parallel to a top surface of the substrate.

A semiconductor memory device may include a stack including word lines and interlayer insulating patterns alternatingly stacked on a substrate, the word lines being extended in a first direction parallel to a top surface of the substrate, semiconductor patterns crossing the word lines and having a long axis extended in a second direction parallel to the top surface of the substrate, data storage patterns respectively interposed between the semiconductor patterns and the word lines, the data storage patterns including a ferroelectric material, bit lines extended in a third direction perpendicular to the top surface of the substrate and spaced apart from each other in the first direction, each of the bit lines being in contact with first side surfaces of the semiconductor patterns spaced apart from each other in the third direction, and a source line in contact with second side surfaces of the semiconductor patterns.

Semiconductor memory device including vertical cell structure and method of fabricating the same

According to certain embodiments, an electronic device comprises: a battery; an interface module; a detection module electrically connected with the interface module, the detection module configured to detect than an external electronic device for receiving power is connected to the interface module; a protection module electrically connected with the interface module and comprising a first switching element; and a charging module electrically connected with the protection module, the detection module, and the battery, and comprising a voltage conversion circuit and a second switching element, the charging module configured to provide a first power to the protection module when the detection module detects connection of the external electronic device, wherein the first switching element is configured to turn on after receiving the first power, wherein the charging module is configured to raise a power from the battery to a designated value through the voltage conversion circuit, thereby resulting in a second power, and, when a designated first time is elapsed after the power from the battery is raised to the designated value, turn on the second switching element, thereby providing the second power to the protection module.

Electronic device capable of providing power to external device

A semiconductor device includes first conductive lines provided on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, second conductive lines spaced apart from the first conductive lines in a second direction parallel to the top surface of the substrate, a gate electrode disposed between the first and second conductive lines and extended in the first direction, a plurality of channel patterns provided to enclose a side surface of the gate electrode and spaced apart from each other in the first direction, a ferroelectric pattern between each of the channel patterns and the gate electrode, and a gate insulating pattern between each of the channel patterns and the ferroelectric pattern. Each of the channel patterns is connected to a corresponding one of the first conductive lines and a corresponding one of the second conductive lines.

Semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Kyunghwan Lee