Samsung Electronics Co., Ltd.

Kyunghoon Sung

Jungmin Park

Ilhan Park

Jisang Lee

Joon Suc Jang

Sanghyun Joo

Minsoo Kim

Deahan Kim

A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.

Nonvolatile memory device and method of programming in the same

A nonvolatile memory device includes a memory cell array includes memory cells, a row decoder, a page buffer circuit and a control logic circuit. The row decoder is connected to the memory cells through word lines and includes switches configured to select the word lines, respectively. The page buffer circuit is connected to the memory cell array through bit lines. The control logic circuit is configured to perform operational functions when the row decoder turns on a switch corresponding to a particular word line among the word lines. The operational functions include supplying a charging voltage to the particular word line through the switch, stopping the supply of the charging voltage after the charging voltage is supplied to the particular word line, leaking a fixed current from the particular word line through the switch after stopping the supply of the charging voltage, and outputting, to an external device, time information about a time from when the fixed current is initially leaked to a time when a voltage of the particular word line becomes lower than a reference voltage.

Nonvolatile memory device, memory system including nonvolatile memory device, and method of controlling nonvolatile memory device

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Seoul, South Korea

Kyunghoon Sung