Samsung Electronics Co., Ltd.

Seoul National University

Kyungduk Lee

Jihwa Lee

Young-Seop Shim

Youn-Soo Cheon

Younsoo Cheon

Jongsung Na

Youngseop Shim

Youhwan Kim

Seungjun Oh

Hosung Ahn

Byungsue Jung

Dae-Won Kim

Jihong Kim

Heeyoub Kang

Hyunjoon Yoo

Kwangkyu Bang

Jaeik Lee

Sangho Yi

Sanghwa Jin

Kirock Kwon

Ho-Sung Ahn

Jong-Sung Na

Seong Geon Lee

Seona Cho

Myoung Seok Kim

Jinwoo Lim

Daehyeon Jo

Inhwan Doh

Hyunwoo Song

Kyunga Lee

Sohyun Han

Seohyun Shin

A method of providing an exposure temperature includes generating reference information indicating relationships between an exposure condition and a retention value, where the exposure condition include an exposure temperature and an exposure time of a nonvolatile memory device and the retention value indicates retention characteristic of the nonvolatile memory device, before a power-off time point when the nonvolatile memory device is powered-off, performing a monitoring program operation to write monitoring data in target memory cells included in the nonvolatile memory device, after a power-on time point when the nonvolatile memory device is powered on, generating a measured retention value by performing a monitoring read operation to read data from the target memory cells, and estimating, based on the reference information, a measured exposure temperature corresponding to the measured retention value and a measured exposure time between the power-off time point and the power-on time point.

Determining exposure temperatures

Disclosed is a storage device, the device comprising, a nonvolatile memory device configured to store data; and a storage controller configured to perform logging for a selected memory area of the nonvolatile memory device in response to a specific event based on receiving a telemetry request from a host, and transmit log data collected by the logging in response to the telemetry request, the storage controller including a logging module configured to sample distribution data of a voltage range corresponding to the event type during the logging and provide the sampled distribution data as the log data.

Storage device, storage system and logging method thereof

A storage device includes a non-volatile memory, a buffer memory, and a storage controller. The controller receives first host data indicating a first logical block address range of the non-volatile memory from a host device, reads first memory data from the non-volatile memory using the first logical block address range, and stores the first memory data in the buffer memory. The storage controller further receives a read command and a read address from the host device, determines whether the read address is within the first logical block address range, read, in response to the read address being determined as within the first logical block address range and the read command, the first memory data from the buffer memory, without accessing the non-volatile memory, and outputs the first memory data from the buffer memory to the host device.

Storage device and data processing method

A storage device is provided. The storage device includes: a nonvolatile memory including memory cells divided into first and second memory cell groups; a memory controller; and a physically unclonable function (PUF) circuit configured to generate PUF data, based on an output of the second memory cell group, by excluding, from the output of the second memory cell group, outputs of a first exclusion area, a second exclusion area, and a third exclusion area, The first exclusion area has a threshold voltage equal to or greater than a first read level and less than a second read level, the second exclusion area has a threshold voltage less than a third read level that is less than the first read level, and the third exclusion area has a threshold voltage equal to or greater than a fourth read level that is greater than the second read level.

Storage device and operating method thereof

A operating method of a storage device including a nonvolatile memory, where the method may include: receiving a first packet including a read command for the nonvolatile memory from a host according to a first protocol; acquiring first requester information corresponding to an identifier (ID) of the host by parsing the first packet; determining resource priorities based on first requester information; reading data stored in the nonvolatile memory by using resources of the storage device according to the resource priorities; and transmitting the data to the host.

Storage devices and operating methods thereof

An operating method of a storage controller which is configured to communicate with a host and with a non-volatile memory device. The method may include: generating an error count by counting a number of first-type error bits of a target super block of the non-volatile memory device, determining whether the error count exceeds a first reference value, fetching setting data from a latch unit of the non-volatile memory device, based on determining that the error count exceeds the first reference value, determining whether reference setting data of a setting table matches the fetched setting data, the reference setting data indicating information about a designed operating environment of the non-volatile memory device, and providing a reset request to the latch unit, based on determining that the reference setting data does not match the fetched setting data.

Storage controllers performing reset operations using setting data, operating methods of storage controllers, and operating methods of storage devices including storage controllers

A storage device including a non-volatile memory for storing data, a temperature sensor having resistance that changes according to temperature of the temperature sensor, and a temperature measurement circuit including a plurality of transistors, which are turned on or off based on a current of the temperature sensor and have different threshold voltages from one another. The temperature management circuit may be configured to apply a current to the temperature sensor and generate information indicating the temperature of the temperature sensor or indicating damage to the temperature sensor based on an output current obtained from the plurality of transistors.

Storage devices detecting internal temperature and defects by using temperature sensors and methods of operating the same

A storage device including: a memory device including a plurality of superblocks, wherein each superblock includes memory blocks included in a group of a plurality of non-volatile memories; and a controller for controlling the memory device, wherein the controller controls a first superblock among the plurality of superblocks to be erased to program data received from a host, controls the data to be programmed in the first superblock, controls the first superblock to be selected as a victim superblock for a garbage collection operation, and controls a media scanning operation to be performed on the memory device when a data duration is greater than a threshold, wherein the data duration is an interval between a first time point, at which the first superblock is erased, and a second time point, at which the first superblock is selected as the victim superblock.

Storage device

A data storage device including: a memory device including a plurality of memory blocks; and a memory controller configured to control the memory device, wherein the plurality of memory blocks are connected with row lines, wherein the row lines include word lines, wherein the memory controller is further configured to: check whether a resistive defect occurs at the row lines except for the word lines; and set a program operation time of a memory block corresponding to a row line, at which the resistive defect occurs, to be longer than a program operation time of the other memory blocks.

Data storage device for checking a defect of row lines and an operation method thereof

A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a '0' bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.

Semiconductor memory devices that support enhanced data recovery operations

Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.

Method for operating memory device

A storage device and operating method thereof includes a storage controller configured to receive a get log page command from a host and transmit, to the host, log data about at least one context selected from among respective contexts of a plurality of components according to the get log page command, and a memory storing the log data, wherein the get log page command includes selection information for selecting at least one component from among the plurality of components.

Storage device and operating method thereof including storing log data

A storage device includes a communication circuit and a controller. The controller is configured to transmit log data to a host device through the communication circuit in response to receiving a first signal from the host device, receive a second signal, including an operation condition of an algorithm of the storage device, from the host device through the communication circuit, and change the operation condition of the algorithm on the basis of the second signal, wherein the algorithm includes one or more instructions for controlling an operation of the storage device.

A storage device includes nonvolatile memories each including an internal temperature sensor; a memory controller configured having a plurality of operation commands defined for different temperature and an external temperature sensor. The memory controller obtains an external temperature value from the external temperature sensor in a first cycle, obtains an internal temperature value of the internal temperature sensor in a second cycle different from the first cycle, determines a temperature range of a target nonvolatile memory based on the external temperature value when a difference between the external temperature value and the internal temperature value is equal to or less than a first threshold value, to determine the temperature range based on the internal temperature value when the difference exceeds the first threshold, and to provide an operation command corresponding to the temperature range to the target nonvolatile memory.

Storage device controlled by temperature dependent operation commands

A storage device and an operating method thereof are provided. The storage device includes a memory configured to store parameter data used as an input in a neural network. The storage device also includes a storage controller configured to receive a request signal from a host. The storage controller is also configured to encode, based on the parameter data, log data in the neural network, the log data indicating contexts of the plurality of components, and transmit the encoded log data to the host.

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Seoul, South Korea

Kyungduk Lee