Lg Display Co., Ltd.

KyungChul Ok

ChanYong Jeong

Dohyung Lee

PilSang Yun

Jiyong Noh

JungSeok Seo

InTak Cho

Jaeman Jang

Younghyun Ko

HongRak Choi

A thin film transistor, a thin film transistor substrate including the thin film transistor and a display device are provided. The thin film transistor includes a first active layer, a first auxiliary gate electrode and a first gate electrode, wherein the first active layer includes a first channel portion, a first connection portion that is in contact with one side of the first channel portion, and a second connection portion that is in contact with the other side of the first channel portion.

Thin film transistor, thin film transistor substrate and display apparatus

A display device includes a main active layer positioned on a substrate includes a channel area, a first conductorized area positioned on a first side of the channel area, and a second conductorized area positioned on a second side of the channel area, a sacrificial active layer is positioned on the main active layer, a gate insulating film is positioned on the sacrificial active layer, a first electrode is positioned on the sacrificial active layer, a portion of the first electrode overlaps the first conductorized area of the main active layer, a second electrode is positioned on the sacrificial active layer, a portion of the second electrode overlaps the second conductorized area of the main active layer, and a third electrode positioned on the gate insulating film overlaps the channel area of the main active layer.

Display device

Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

Thin film transistor and display apparatus comprising the same

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Paju-si, South Korea

KyungChul Ok