Korea Institute of Science and Technology

Oci Company Ltd.

Lg Semicon Co., Ltd.

Lg Cns Co., Ltd.

Institute of Ion-plasma and Laser Technologies

Institution of Ion-plasma and Laser Technologies

Kyung Y Kim

Wang S Kim

Yong Il Kim

Hyung Jin Jung

Deok Yun Kim

Ashurova Khekayat

Ashurov Khatam

Kwang Ho Chang

Salikhov Shavkat

Jung Rak Yun

Rotshteyn Vladimir

Azizov Sultan

Jong Hoon Park

Yoshiyuki Inaguma

Taek Joong Kim

Se In Yang

Mitsuru Itoh

Sang O Yoon

Tetsuro Nakamura

Hue Sup Song

Ashurov Rustam

Yoon D Ju

Abdurakhmanov Boris

Suk K Hong

Kurbanov Aziz

Salimboev Akmal

Saidov Sabir

Abdisaidov Ilyos

Whan Choi

Provided are a server and method for recognizing an image to determine whether an inspection target is faulty. The method includes generating a new image by transforming N images acquired from an inspection target into one or more channel spaces, and extracting a feature value by learning N images acquired by separating the new image according to channels.

Server and method for recognizing image using deep learning

Provided is a method for preparing monosilane, more particularly a method for economically preparing monosilane, which is useful for the composition of a thin semiconductor structure and multipurpose high-purity polycrystalline silicon, by preparing monosilane with high purity and high yield using trialkoxysilane.

Method for preparing monosilane using trialkoxysilane

The present invention relates to a method for preparing SiH(OR)-type trialkoxysilane (wherein, R is a C1-C3 methyl, ethyl, propyl or isopropyl group), and more specifically, the method comprises the steps of: preventing the oxidation of a silicon surface by pulverizing raw silicon material in a solvent environment without contact with the air so that the initial induction period of the direct synthesis of trialkoxysilane is dramatically reduced; and removing impurities from a reaction environment by continuously selecting a part of the solvent through a membrane filter provided in a reactor body.

Method for preparing trialkoxysilane

The present invention relates to a dielectric material for a microwave of a CaTiO.sub.3 -La(Mg.sub.1/2 Ti.sub.1/2)O.sub.3 -LaAlO.sub.3 group. The dielectric material for a microwave according to the present invention includes a composition condition of 0.3.ltoreq.x.ltoreq.0.6 and 0.ltoreq.y.ltoreq.1.0 wherein (1-x)CaTiO.sub.3 -x�(1-y)La(Mg.sub.1/2 Ti.sub.1/2)O.sub.3 -yLaAlO.sub.3 !. The high frequency dielectric material includes an dielectric constant of above 40, a low dielectric loss, and a temperature coefficient of a resonant frequency which is easily variable from a positive (+) value to a negative (-) value with respect to the value of 0 ppm/.degree.C.

Dielectric material for microwave of CaTIO.sub.3 -La(Mg.sub.1/2

A non-overlapping signal generation circuit comprising a NOR gate for NORing a chip select signal and an address signal, an inverter for inverting an output signal from the NOR gate, a first inversion circuit for sequentially inverting an output signal from the inverter by an odd number of times, a second inversion circuit for sequentially inverting the output signal from the inverter by an even number of times, an address transition detector for generating an address transition detect signal in response to the output signal from the inverter, and a non-overlapping signal generator for generating an enable signal and a disable signal in response to the address transition detect signal from the address transition detector and output signals from the first and second inversion circuits, the enable signal and the disable signal non-overlapping with each other. According to the present invention, the enable signal and the disable signal can be generated with their high levels accurately non-overlapping with each other for an active pulse duration of the address transition detect signal.

Non-overlaping signal generation circuit

There is disclosed a dielectric material for high frequencies comprising a composition system represented by the following formula:

Dielectric material for high frequencies

This invention relates to a broad bandwidth electromagnetic wave absorber comprising a sintered ferrite and a CuO--Fe.sub.2 O.sub.3 system. The CuO--Fe.sub.2 O.sub.3 system, a spinel ferrite, has its own magnetic property, which makes it possible to be used for an electromagnetic wave absorber. The CuO--Fe.sub.2 O.sub.3 system is preferentially located at the grain boundary in the matrix ferrite. This resulted in increase in the total loss, decrease in matching thickness and shift in the center frequency.

Wide band type electromagnetic wave absorber

A microwave dielectric ceramic composition exhibiting superior high frequency characteristics, particular temperature coefficients suitable for materials for cellular phones, which composition comprises approximately 0.1 to approximately 0.3 mole fraction of CaTiO.sub.3 having a negative temperature coefficient and approximately 0.9 to approximately 0.7 mole fraction of (Li.sub.1/2 Nd.sub.1/2)TiO.sub.3 having a positive temperature coefficient, and optionally a predetermined amount of an additive, preferably Nd.sub.2 O.sub.3, Li.sub.2 CO.sub.3, Na.sub.2 CO.sub.3 and CeO.sub.2.

Microwave dielectric ceramic composition

Ferrites as an electromagnetic wave absorber have their unique attenuation ranges depending on their compositions. The possibility of controlling attenuation characteristics of ferrite absorber by forming laminates of ferrite is disclosed. This invention provides that the center frequency of laminated ferrites could be changed arbitrarily employing ferrite with different composition and thickness. The method consists of stacking at least two soft ferrite layers (Ni-Zn, Mn-Zn) with various thickness.

Laminated electromagnetic wave absorber

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Seoul, South Korea

Kyung Y Kim