Hynix Semiconductor Inc.

Skhynix Inc.

Kyung-Woong Park

Kee-Jeung Lee

Kwan-Woo Do

Deok-Sin Kil

Jin-Hyock Kim

Young-Dae Kim

Jeong-Yeop Lee

Han-Sang Song

Jae-Sung Roh

Ji-Hoon Ahn

Kwon Hong

Yun-Hyuck Ji

Beom-Yong Kim

Seung-Mi Lee

Woo-Young Park

Jae-Hyoung Koo

Ja-Yong Kim

A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer.

Method for fabricating semiconductor device

A method for fabricating a capacitor includes: forming a first silicon layer over a semiconductor substrate, where the first silicon layer is doped with a dopant; forming an undoped second silicon layer over the first silicon layer; forming an opening by etching the second silicon layer and the first silicon layer; forming a storage node in the opening; and removing the first silicon layer and the second silicon layer.

Method for fabricating capacitor with high aspect ratio

A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Capacitor with pillar type storage node and method for fabricating the same

An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.

Electrode of semiconductor device and method for fabricating capacitor

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.

Semiconductor device and method for fabricating the same

A noble metal layer is formed using ozone (O) as a reaction gas.

Method of forming noble metal layer using ozone reaction gas

A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.

Method of fabricating capacitor

A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.

Semiconductor device and method of fabricating the same

A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuTiOfilm is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuTiOfilm during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.

Method of fabricating capacitor in semiconductor device

A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Capacitor with pillar type storage node and method for fabricating the same including conductive capping layer

A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first RuOlayer over the substrate, forming a Ru layer for a lower electrode over the first RuOlayer and deoxidizing the first RuOlayer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first RuOlayer contains oxygen in an amount less than an oxygen amount of a RuOlayer.

Growing community of inventors

Gyeonggi-do, South Korea

Kyung-Woong Park